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2N1847B

Texas Instruments

2N1847B by Texas Instruments

2N1847B by Texas Instruments is a Silicon Controlled Rectifier with 75mA DC Gate Trigger Current, 150A Non Repetitive Peak On-state Current, and 13A Max On-state Current. It operates b/w -65°C to 125°C and has a max DC Gate Trigger Voltage of 3.5V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,868 parts In-Stock

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Digiode

USA . 1,579 parts In-Stock

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Native Components

USA . 755 parts In-Stock

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$1.391

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755

$1.391

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Northwest PG Solutions

USA . 1,943 parts In-Stock

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$1.530

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Ampacity Inc.

Singapore . 1,434 parts In-Stock

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$2.100

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One Stop Electronics

USA . 999 parts In-Stock

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Parana Technologies

USA . 204 parts In-Stock

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$3.868

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$4.352

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DigiPath Technology Company

USA . 635 parts In-Stock

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$4.259

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$4.259

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IDEA Electronic Components Group

UK . 2,315 parts In-Stock

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$4.346

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$3.911

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ChromeModa Solutions

Germany . 1,187 parts In-Stock

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$4.346

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$3.564

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AZTECH Wire

Italy . 897 parts In-Stock

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$9.240

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Semicontronic

India . 1,251 parts In-Stock

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$15.100

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$14.722

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$14.647

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Corphita

USA . 342 parts In-Stock

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Corohmni

South Africa . 64 parts In-Stock

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Overview

Unlock the power of reliable performance with the Texas Instruments 2N1847B Silicon Controlled Rectifier. Manufactured by a trusted industry leader, this SCR is designed to provide superior quality and durability for a wide range of applications. Whether you're looking to enhance your electronic projects or streamline industrial processes, this product offers unmatched value, benefits, and advantages. Experience peace of mind knowing that you're investing in a high-quality component that delivers consistent results every time. Elevate your projects with the 2N1847B and discover the difference today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

The low gate trigger current requirement ensures efficient and reliable operation of the SCR.

Non Repetitive Peak On-state Current: 150 A

The high peak on-state current allows the SCR to handle high power and current loads without issues.

Maximum On-state Current: 13 A

The maximum on-state current rating indicates the SCR's capability to handle continuous current flow without overheating.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss and improved efficiency during standby or off state.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows the SCR to operate in a variety of environments and applications.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this product is suitable for applications requiring high current rectification and control.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature indicates that the SCR can withstand cold temperatures without performance degradation.

Maximum DC Gate Trigger Voltage: 3.5 V

The low gate trigger voltage requirement ensures efficient triggering of the SCR without the need for high voltage signals.

Repetitive Peak Off-state Voltage: 250 V

The high off-state voltage rating allows the SCR to block high voltages when it is in the off state, improving safety and reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1847B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

13 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

250 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1847B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-902-7475, 5961009027475

NIIN

009027475

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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