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2N1850B

Texas Instruments

2N1850B by Texas Instruments

2N1850B by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 75mA, Non Repetitive Peak On-state Current of 150A, and Max On-state Current of 13A. It operates b/w -65°C to 125°C and has a Max Leakage Current of 1mA. Ideal for applications requiring precise current control in electronic circuits.

Median Price

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3

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1k+

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Digiode

USA . 3,614 parts In-Stock

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Vyrian

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Electronic Expediters

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Native Components

USA . 415 parts In-Stock

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$1.970

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Northwest PG Solutions

USA . 61 parts In-Stock

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Parana Technologies

USA . 738 parts In-Stock

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$4.028

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ChromeModa Solutions

Germany . 4,718 parts In-Stock

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$3.711

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IDEA Electronic Components Group

UK . 2,170 parts In-Stock

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AZTECH Wire

Italy . 838 parts In-Stock

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One Stop Electronics

USA . 255 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 2,249 parts In-Stock

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Overview

Unlock the power of precise control with the 2N1850B by Texas Instruments. Crafted with unparalleled quality and expertise, this Silicon Controlled Rectifier offers reliable performance for a wide range of applications. From industrial machinery to consumer electronics, this SCR delivers maximum efficiency and durability. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations. Experience the value and benefits of the 2N1850B and elevate your projects to new heights.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

Having a high gate trigger current means the SCR can be easily and reliably turned on when the gate signal is applied, ensuring proper functioning of the device.

Non Repetitive Peak On-state Current: 150 A

The high non-repetitive peak on-state current capability allows the SCR to handle sudden high current surges without damage, making it suitable for applications with varying load conditions.

Maximum On-state Current: 13 A

With a maximum on-state current of 13 A, this SCR is capable of handling moderate current loads and is ideal for applications with lower power requirements.

Maximum Leakage Current: 1 mA

The low maximum leakage current ensures minimal power loss when the SCR is in the off-state, increasing efficiency and reliability of the device.

Maximum Operating Temperature: 125 °C

SCRs with a high maximum operating temperature are more robust and can withstand elevated temperatures, making them suitable for industrial and high-temperature applications.

Trigger Device Type: SCR

Being an SCR, this device offers precise control over the conduction of current and can be used in applications requiring high stability and reliability.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows the SCR to function in cold environments without performance degradation, making it versatile for use in various temperature conditions.

Maximum DC Gate Trigger Voltage: 3.5 V

The low gate trigger voltage requirement of 3.5 V ensures energy-efficient operation and simplifies the control circuitry design for the SCR, reducing overall costs.

Repetitive Peak Off-state Voltage: 500 V

The high repetitive peak off-state voltage capability of 500 V enables the SCR to block high voltages during the off-state, making it suitable for high-voltage applications where reliable switching is crucial.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1850B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

13 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1850B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-241-1418, 5961002411418

NIIN

002411418

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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