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2N1850

STMicroelectronics

2N1850 by STMicroelectronics

STMicroelectronics' 2N1850 is a Silicon Controlled Rectifier with max. DC Gate Trigger Current of 100mA, Non Repetitive Peak On-state Current of 125A, and Max. On-state Current of 10A. It operates b/w -40 °C to 100°C, suitable for various applications requiring SCR trigger devices with Vgt=3V and Vdrm=500V.

Median Price

$6.500

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 50 parts In-Stock

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-

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$6.500

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$6.500

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$6.500

50

-

$6.500

$6.500

$6.500

Distributors (In-Stock)

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Ace Electronics

USA . 4 parts In-Stock

1+ parts

$10.000

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-

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4

$10.000

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Bristol Electronics

USA . 350 parts In-Stock

1+ parts

$15.720

100+ parts

$14.510

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$12.890

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350

$15.720

$14.510

$12.890

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Vyrian

USA . 8,094 parts In-Stock

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8,094

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Anansix

USA . 2,473 parts In-Stock

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Electronic Expediters

USA . 171 parts In-Stock

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Digiode

USA . 117 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 28 parts In-Stock

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M&R Communications

USA . 25 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,781 parts In-Stock

1+ parts

$4.014

100+ parts

-

1k+ parts

$3.613

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1,781

$4.014

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$3.613

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MKK Technologies

India . 1,762 parts In-Stock

1+ parts

$7.548

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1,762

$7.548

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DigiPath Technology Company

USA . 1,762 parts In-Stock

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$7.548

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1,762

$7.548

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Microchip USA

USA . 5,227 parts In-Stock

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$18.200

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$18.200

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Corphita

USA . 2,981 parts In-Stock

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Parana Technologies

USA . 1,475 parts In-Stock

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$4.799

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1,475

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$4.799

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Northwest PG Solutions

USA . 1,173 parts In-Stock

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Native Components

USA . 561 parts In-Stock

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Overview

Discover the power of the 2N1850 by STMicroelectronics, a top-of-the-line Silicon Controlled Rectifier that delivers unmatched quality and reliability. With a maximum DC Gate Trigger Current of 100 mA and a Non Repetitive Peak On-state Current of 125 A, this SCR is perfect for a wide range of applications. From industrial controls to power supplies, the 2N1850 offers exceptional performance and durability. Trust STMicroelectronics to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the 2N1850 and experience the difference it can make in your designs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 100 mA

The high gate trigger current ensures reliable and consistent switching of the SCR, making it suitable for a wide range of applications.

Non Repetitive Peak On-state Current: 125 A

The high peak on-state current capability allows the SCR to handle large surge currents transiently, making it suitable for high-power applications.

Maximum On-state Current: 10 A

The high on-state current capability of 10 A enables the SCR to handle moderate to high current loads efficiently.

Maximum Leakage Current: 1 mA

The low leakage current of 1 mA ensures minimal power loss when the SCR is in the off state, improving overall efficiency.

Maximum Operating Temperature: 100 °C

The high operating temperature range of 100 °C ensures the SCR can be used in a variety of environments without overheating or malfunctioning.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows the SCR to function reliably even in cold environments.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement of 3 V simplifies the driving circuit design and enables efficient triggering of the SCR.

Repetitive Peak Off-state Voltage: 500 V

The high off-state voltage rating of 500 V allows the SCR to withstand high voltage spikes and surges, making it suitable for industrial applications.

Maximum Holding Current: 200 mA

The high holding current capability of 200 mA ensures the SCR remains in the on state even when the gate signal is removed, providing stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1850 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

200 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

125 A

Maximum On-state Current:

10 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1850 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-241-1418, 5961002411418, 5961-00-308-9989, 5961003089989

NIIN

002411418, 003089989

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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