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2N1846B

Texas Instruments

2N1846B by Texas Instruments

2N1846B by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 75mA, Non Repetitive Peak On-state Current of 150A, and Max On-state Current of 13A. It operates b/w -65°C to 125°C and has a Repetitive Peak Off-state Voltage of 200V. Ideal for power control applications requiring precise current regulation.

Median Price

$15.720

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 250 parts In-Stock

1+ parts

$15.720

100+ parts

$14.510

1k+ parts

$12.890

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250

$15.720

$14.510

$12.890

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Vyrian

USA . 7,827 parts In-Stock

1+ parts

-

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7,827

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Digiode

USA . 2,055 parts In-Stock

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2,055

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Electronic Expediters

USA . 196 parts In-Stock

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196

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Distributors (Availability)

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Native Components

USA . 706 parts In-Stock

1+ parts

$0.359

100+ parts

-

1k+ parts

-

10k+ parts

$0.345

706

$0.359

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-

$0.345

Northwest PG Solutions

USA . 711 parts In-Stock

1+ parts

$0.395

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$0.349

711

$0.395

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$0.349

Parana Technologies

USA . 136 parts In-Stock

1+ parts

$4.448

100+ parts

-

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$4.877

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136

$4.448

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$4.877

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ChromeModa Solutions

Germany . 6,424 parts In-Stock

1+ parts

$4.998

100+ parts

$4.098

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6,424

$4.998

$4.098

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IDEA Electronic Components Group

UK . 2,366 parts In-Stock

1+ parts

$4.998

100+ parts

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$4.498

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2,366

$4.998

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$4.498

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One Stop Electronics

USA . 970 parts In-Stock

1+ parts

$7.100

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970

$7.100

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AZTECH Wire

Italy . 850 parts In-Stock

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$17.623

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850

$17.623

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Corphita

USA . 4,977 parts In-Stock

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4,977

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DigiPath Technology Company

USA . 170 parts In-Stock

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100+ parts

$4.506

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170

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$4.506

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Overview

Unlock the power of precision with the 2N1846B by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality Silicon Controlled Rectifiers (SCR) designed for maximum performance and reliability. Ideal for a wide range of applications, this SCR offers unparalleled efficiency and durability. Experience seamless operation and superior functionality with the 2N1846B, providing unmatched value and benefits to customers looking to elevate their projects to the next level.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

The low gate trigger current allows for precise control of the SCR, making it suitable for applications requiring accurate triggering.

Non Repetitive Peak On-state Current: 150 A

The high peak on-state current capability ensures that the SCR can handle heavy loads and surge currents, making it reliable for demanding applications.

Maximum On-state Current: 13 A

The high on-state current rating allows the SCR to carry substantial current continuously, making it suitable for power control and switching applications.

Maximum Leakage Current: 1 mA

The low leakage current ensures minimal power loss when the SCR is in the off-state, contributing to energy efficiency in the system.

Maximum Operating Temperature: 125 °C

The high operating temperature range indicates that the SCR can withstand elevated temperatures without degradation, making it suitable for industrial and high-temperature environments.

Trigger Device Type: SCR

Being an SCR, this device offers reliable and robust performance in high-power applications, ensuring stable switching and control of electrical circuits.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows the SCR to function effectively in cold environments or applications where temperature variations are significant.

Maximum DC Gate Trigger Voltage: 3.5 V

The low gate trigger voltage ensures that the SCR can be easily controlled with low-power signal levels, making it suitable for sensitive electronic circuits.

Repetitive Peak Off-state Voltage: 200 V

The high off-state voltage rating ensures that the SCR can block voltage spikes and surges effectively, making it reliable for protecting circuits from overvoltage conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1846B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

13 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1846B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-934-3094, 5961009343094

NIIN

009343094

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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