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2N1848

STMicroelectronics

2N1848 by STMicroelectronics

STMicroelectronics' 2N1848 is a Silicon Controlled Rectifier with max. DC Gate Trigger Current of 100mA, Non Repetitive Peak On-state Current of 125A, and Max. On-state Current of 10A. It operates b/w -40 °C to 100°C, suitable for various SCR applications requiring precise current control.

Median Price

$15.720

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20 parts In-Stock

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Bristol Electronics

USA . 238 parts In-Stock

1+ parts

$15.720

100+ parts

$14.510

1k+ parts

$12.890

10k+ parts

-

238

$15.720

$14.510

$12.890

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Vyrian

USA . 6,508 parts In-Stock

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Digiode

USA . 4,039 parts In-Stock

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Anansix

USA . 1,928 parts In-Stock

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DigiKey Marketplace

USA . 20 parts In-Stock

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DF Sales Co.

USA . 8 parts In-Stock

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DF Sales Co.

USA . 8 parts In-Stock

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8

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 21 parts In-Stock

1+ parts

$1.391

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Northwest PG Solutions

USA . 1,748 parts In-Stock

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$1.530

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1,748

$1.530

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IDEA Electronic Components Group

UK . 885 parts In-Stock

1+ parts

$3.054

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$2.749

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885

$3.054

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$2.749

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MKK Technologies

India . 150 parts In-Stock

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$5.744

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$5.744

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DigiPath Technology Company

USA . 150 parts In-Stock

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$5.744

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Microchip USA

USA . 6,364 parts In-Stock

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Corphita

USA . 1,978 parts In-Stock

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1,978

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Parana Technologies

USA . 587 parts In-Stock

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$3.652

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$3.652

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Overview

Unlock the power of innovation with the 2N1848 Silicon Controlled Rectifier by STMicroelectronics. Known for their superior quality and reliability, STMicroelectronics delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this SCR offers unparalleled performance and efficiency. Whether you're in the automotive, industrial, or consumer electronics industry, the 2N1848 provides exceptional value, benefits, and advantages to meet your needs. Stay ahead of the curve with STMicroelectronics and revolutionize your projects today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 100 mA

The high maximum DC gate trigger current ensures reliable triggering of the SCR, improving the overall performance and efficiency of the product.

Non Repetitive Peak On-state Current: 125 A

The high non repetitive peak on-state current allows the SCR to handle high current surges without damage, making it suitable for applications requiring high power handling capabilities.

Maximum On-state Current: 10 A

The maximum on-state current of 10 A enables the SCR to efficiently conduct current in normal operating conditions, ensuring reliable performance.

Maximum Leakage Current: 1 mA

The low maximum leakage current of 1 mA indicates minimal power loss when the SCR is in the off-state, contributing to the overall energy efficiency of the product.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature of 100 °C allows the SCR to withstand elevated temperature conditions, ensuring reliable operation in harsh environments.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this device offers precise control over current flow, making it suitable for applications requiring controlled switching.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C enables the SCR to function effectively in cold environments, expanding its usability in a variety of applications.

Maximum DC Gate Trigger Voltage: 3 V

The low maximum DC gate trigger voltage of 3 V ensures efficient triggering of the SCR with minimal power consumption, enhancing the overall energy efficiency of the product.

Repetitive Peak Off-state Voltage: 300 V

The high repetitive peak off-state voltage of 300 V allows the SCR to block high voltages when in the off-state, making it suitable for applications requiring voltage regulation.

Maximum Holding Current: 200 mA

The high maximum holding current of 200 mA ensures that the SCR remains in the on-state without requiring continuous gate current, enhancing the stability of the device during operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1848 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Maximum DC Gate Trigger Current:

100 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

200 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

125 A

Maximum On-state Current:

10 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1848 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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