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1B15CL20

Texas Instruments

1B15CL20 by Texas Instruments

1B15CL20 by Texas Instruments is a Silicon Controlled Rectifier with 50mA DC Gate Trigger Current, 30A Non Repetitive Peak On-state Current, and 1.5A Max On-state Current. It is ideal for applications requiring high current switching capabilities in circuits with voltages up to 200V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,461 parts In-Stock

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Vyrian

USA . 3,903 parts In-Stock

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Parana Technologies

USA . 955 parts In-Stock

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$2.915

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$3.414

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955

$2.915

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$3.414

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ChromeModa Solutions

Germany . 4,330 parts In-Stock

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$3.275

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$2.686

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$3.275

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IDEA Electronic Components Group

UK . 435 parts In-Stock

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$3.275

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$2.948

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435

$3.275

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$2.948

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Semicontronic

India . 223 parts In-Stock

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$15.100

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$14.722

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$14.647

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223

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AZTECH Wire

Italy . 684 parts In-Stock

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$16.932

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Ampacity Inc.

Singapore . 443 parts In-Stock

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$22.100

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One Stop Electronics

USA . 798 parts In-Stock

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$26.100

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Native Components

USA . 453 parts In-Stock

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$576.675

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$565.141

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$559.375

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$553.608

453

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$565.141

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$553.608

Northwest PG Solutions

USA . 1,299 parts In-Stock

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$634.342

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$634.342

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DigiPath Technology Company

USA . 1,191 parts In-Stock

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$2.953

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Corphita

USA . 614 parts In-Stock

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Corohmni

South Africa . 258 parts In-Stock

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Overview

Looking for a reliable and high-quality Silicon Controlled Rectifier (SCR)? Look no further than the 1B15CL20 by Texas Instruments. With a maximum DC Gate Trigger Current of 50 mA and a Non Repetitive Peak On-state Current of 30 A, this SCR is perfect for a variety of applications. From power supplies to motor control, this product offers exceptional performance and reliability. Trust in Texas Instruments' reputation for excellence and experience the value and benefits that the 1B15CL20 can bring to your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

Having a high gate trigger current allows for precise control over when the SCR switches on, making this product suitable for applications requiring precise timing.

Non Repetitive Peak On-state Current: 30 A

With a high peak on-state current rating, this SCR can handle temporary surges in current without malfunctioning, making it dependable in high-power applications.

Maximum On-state Current: 1.5 A

The ability to handle up to 1.5A of continuous current ensures this SCR is suitable for a wide range of medium-power applications.

Maximum Leakage Current: 0.005 mA

Low leakage current means that the SCR consumes minimal power when in the off-state, increasing energy efficiency in the overall system.

Maximum Operating Temperature: 100 °C

The SCR can operate at temperatures up to 100°C, allowing for use in high-temperature environments without the risk of overheating.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers stable and reliable switching characteristics, making it a preferred choice for many power control applications.

Maximum DC Gate Trigger Voltage: 50 V

The low gate trigger voltage requirement of 50V ensures compatibility with a wide range of control circuits, making integration easier in different systems.

Repetitive Peak Off-state Voltage: 200 V

With a high off-state voltage rating, this SCR can withstand voltage spikes and transients, ensuring reliable operation in potentially noisy environments.

Maximum Holding Current: 70 mA

A high holding current means the SCR can remain in the on-state even after the gate signal is removed, providing stability in applications where consistent conduction is required.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 1B15CL20 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

50 V

Maximum Holding Current:

70 mA

Maximum Leakage Current:

.005 mA

Non Repetitive Peak On-state Current:

30 A

Maximum On-state Current:

1.5 A

Maximum Operating Temperature:

100 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

1B15CL20 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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