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TICP106E

Texas Instruments

TICP106E by Texas Instruments

TICP106E by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.2mA, On-state Current of 2A, and Off-state Voltage of 500V. It operates b/w -60 to 125°C and is ideal for applications requiring precise current control in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,476 parts In-Stock

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Digiode

USA . 1,494 parts In-Stock

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Parana Technologies

USA . 2,174 parts In-Stock

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$4.408

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$4.828

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2,174

$4.408

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$4.828

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ChromeModa Solutions

Germany . 2,690 parts In-Stock

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$4.953

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$4.061

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$4.953

$4.061

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IDEA Electronic Components Group

UK . 457 parts In-Stock

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$4.953

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$4.458

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457

$4.953

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$4.458

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AZTECH Wire

Italy . 691 parts In-Stock

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$11.987

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One Stop Electronics

USA . 979 parts In-Stock

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$23.100

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979

$23.100

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Semicontronic

India . 680 parts In-Stock

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$29.100

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$28.372

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$28.227

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680

$29.100

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$28.227

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Ampacity Inc.

Singapore . 1,251 parts In-Stock

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$30.100

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Corphita

USA . 1,754 parts In-Stock

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Corohmni

South Africa . 354 parts In-Stock

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DigiPath Technology Company

USA . 4 parts In-Stock

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$4.466

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Overview

Discover the power of the TICP106E by Texas Instruments, a top-quality Silicon Controlled Rectifier that sets the standard for excellence in its category. With a maximum on-state current of 2A and a non-repetitive peak on-state current of 15A, this product offers unmatched performance and reliability. Ideal for a wide range of applications, this SCR is designed to meet the needs of customers looking for a high-quality solution. Trust in Texas Instruments for superior products that deliver value, benefits, and advantages to take your projects to the next level.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient and precise control of the SCR, making it suitable for applications requiring low power consumption.

Non Repetitive Peak On-state Current: 15 A

High peak on-state current capability ensures the SCR can handle sudden surges of current without getting damaged, making it reliable in high power applications.

Maximum On-state Current: 2 A

With a maximum on-state current of 2 A, this SCR is suitable for medium power applications where controlled current flow is necessary.

Maximum Leakage Current: 0.01 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, making it energy-efficient and cost-effective.

Maximum Operating Temperature: 125 °C

High operating temperature range allows the SCR to be used in various environments without the risk of overheating, ensuring long-term reliability.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this product is specifically designed for applications requiring precise control over the flow of current, making it a reliable choice for such applications.

Minimum Operating Temperature: -60 °C

Wide range of operating temperatures allows the SCR to be used in extreme cold environments, making it versatile for various applications.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage ensures efficient and reliable triggering of the SCR, allowing for precise control over the switching of current.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating makes this SCR suitable for applications with high voltage requirements, ensuring safe and reliable operation.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

With a minimum critical rate of rise of off-state voltage, this SCR can effectively respond to rapid changes in voltage, making it suitable for dynamic applications.

Maximum Holding Current: 5 mA

A maximum holding current of 5 mA ensures the SCR remains in the on-state once triggered, providing stability and reliability in continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TICP106E attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

15 A

Maximum On-state Current:

2 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TICP106E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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