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STT2200N16P55XPSA1

Infineon Technologies

STT2200N16P55XPSA1 by Infineon Technologies

STT2200N16P55XPSA1 by Infineon Technologies is a Silicon Controlled Rectifier (SCR) with a max on-state voltage of 1.38 V and a max DC gate trigger current of 200 mA. It is commonly used in applications requiring high non-repetitive peak on-state current, such as power electronics and industrial automation.

Median Price

$738.553

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 42 parts In-Stock

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$738.553

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42

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Vyrian

USA . 2,013 parts In-Stock

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Digiode

USA . 591 parts In-Stock

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Ampacity Inc.

Singapore . 1,220 parts In-Stock

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$2.100

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1,220

$2.100

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Modulus Dynamics

Lithuania . 789 parts In-Stock

1+ parts

$2.645

100+ parts

$2.539

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$2.433

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789

$2.645

$2.539

$2.433

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Aztec Data Supply Inc.

USA . 1,238 parts In-Stock

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$2.770

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$2.770

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Corohmni

South Africa . 250 parts In-Stock

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$3.245

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250

$3.245

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AZTECH Wire

Italy . 721 parts In-Stock

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$18.960

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721

$18.960

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Argo Parts USA

USA . 4,515 parts In-Stock

1+ parts

$674.008

100+ parts

$667.268

1k+ parts

$660.528

10k+ parts

$653.788

4,515

$674.008

$667.268

$660.528

$653.788

Continental Prestige Electronics

USA . 2,994 parts In-Stock

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$674.008

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$660.528

2,994

$674.008

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Netroflash

USA . 1,000 parts In-Stock

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$738.553

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$701.625

10k+ parts

$686.854

1,000

$738.553

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$701.625

$686.854

Microchip USA

USA . 3,722 parts In-Stock

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$836.352

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3,722

$836.352

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Corphita

USA . 954 parts In-Stock

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Overview

Discover the STT2200N16P55XPSA1, a top-quality silicon controlled rectifier by Infineon Technologies. With its anti-parallel configuration and 2 elements, this advanced device offers customers unparalleled performance and reliability. Whether used in industrial applications or power control systems, this SCR guarantees maximum on-state voltage of 1.38 V and non-repetitive peak on-state current of 21000 A. Designed with the highest standards in mind, the STT2200N16P55XPSA1 is your go-to solution for efficient power management. Upgrade your systems today and experience the value and advantages it brings!

Feature Benefit Bullets

Maximum On-state Voltage: 1.38 V

Low voltage drop ensures efficient operation and minimal power dissipation.

Maximum DC Gate Trigger Current: 200 mA

Provides precise control over the SCR's switching behavior, allowing for reliable operation under various conditions.

Configuration: ANTI-PARALLEL, 2 ELEMENTS

Dual-element design provides redundancy and enhances the SCR's ability to handle high current applications.

Non Repetitive Peak On-state Current: 21000 A

Capable of handling extremely high current spikes, making it suitable for demanding industrial applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy mounting and integration into electronic circuits or equipment.

No. of Elements: 2

Multiple elements allow for better current distribution, enhancing the overall performance and prolonging the lifespan of the SCR.

Maximum Leakage Current: 180 mA

Low leakage current reduces power loss and ensures efficient performance in standby or low-current applications.

Repetitive Peak Reverse Voltage: 1600 V

Withstands high reverse voltages, making it suitable for use in AC power control systems.

No. of Terminals: 4

Multiple terminals enable efficient connection and control of the SCR within different circuits or systems.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides secure and reliable mechanical support for the SCR, ensuring its stability in various operating environments.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures without compromising performance, allowing for usage in harsh industrial environments.

Trigger Device Type: SCR

Utilizes silicon-controlled rectifier technology, known for its robustness, high reliability, and quick response to control signals.

Minimum Operating Temperature: -40 °C

Maintains stable operation even in extremely cold conditions, expanding its usability in diverse environments.

Terminal Position: UPPER

The upper terminal position enables convenient connection and integration with other components in the circuit or system.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage allows for precise control and ease of use in various triggering applications.

Repetitive Peak Off-state Voltage: 1600 V

Can resist high reverse voltage, ensuring accurate switching and protection against voltage surges.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

Rapid response to changes in off-state voltage enhances the SCR's ability to protect against voltage transients.

Maximum Holding Current: 300 mA

The SCR can maintain conduction even when the applied current drops below this value, making it suitable for applications with varying load conditions.

Nominal Circuit Commutated Turn-off Time: 250 us

Fast turn-off time enables efficient control and minimizes power losses during switching transitions.

Reference Standard: IEC-747-6

Complies with international safety and performance standards, ensuring reliability and compatibility with a wide range of applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) STT2200N16P55XPSA1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Nominal Circuit Commutated Turn-off Time:

250 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

200 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

300 mA

JESD-30 Code:

R-XUFM-X4

Maximum Leakage Current:

180 mA

Non Repetitive Peak On-state Current:

21000 A

No. of Elements:

2

No. of Terminals:

4

Maximum On-state Voltage:

1.38 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

IEC-747-6

Repetitive Peak Off-state Voltage:

1600 V

Repetitive Peak Reverse Voltage:

1600 V

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

STT2200N16P55XPSA1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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