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TICP106M

Texas Instruments

TICP106M by Texas Instruments

TICP106M by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.2mA, On-state Current of 2A, and Off-state Voltage of 600V. It operates b/w -60 to 125°C and is ideal for applications requiring precise current control in electronic circuits.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Digiode

USA . 4,435 parts In-Stock

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Vyrian

USA . 2,884 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 124 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1 parts In-Stock

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Parana Technologies

USA . 2,290 parts In-Stock

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$4.141

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$4.589

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$4.141

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DigiPath Technology Company

USA . 1,276 parts In-Stock

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$4.560

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ChromeModa Solutions

Germany . 6,491 parts In-Stock

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$4.653

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$3.815

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IDEA Electronic Components Group

UK . 824 parts In-Stock

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$4.653

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$4.188

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One Stop Electronics

USA . 1,013 parts In-Stock

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$6.100

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AZTECH Wire

Italy . 858 parts In-Stock

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$15.502

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Corphita

USA . 2,703 parts In-Stock

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Benley Electronics

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Assy Fe

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Overview

Enhance your electronic projects with the TICP106M by Texas Instruments, a high-quality Silicon Controlled Rectifier designed for optimal performance and reliability. Manufactured by a trusted brand in the industry, this SCR offers precise control over power circuits, making it ideal for various applications such as motor control, lighting, and heating systems. Experience the value of enhanced efficiency and functionality with the TICP106M, providing customers with unmatched benefits and advantages for their projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control and triggering of the SCR, ensuring reliable operation.

Non Repetitive Peak On-state Current: 15 A

High peak on-state current capability allows for handling sudden high current loads without damage to the SCR, making it suitable for various applications.

Maximum On-state Current: 2 A

With a maximum on-state current of 2 A, this SCR can handle moderate current requirements effectively, making it versatile for different circuit designs.

Maximum Leakage Current: 0.01 mA

Low leakage current ensures minimal power loss and helps maintain efficiency in the system where this SCR is used.

Maximum Operating Temperature: 125°C

High operating temperature capability ensures reliability and stability even in demanding environments where temperature variations are common.

Minimum Operating Temperature: -60°C

Wide operating temperature range allows for use in both extreme cold and hot conditions, increasing the versatility of this SCR.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage requirement simplifies the control circuit design and reduces overall power consumption in the system.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating makes this SCR suitable for applications where high voltage handling capability is required, ensuring safety and reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

The critical rate of rise of off-state voltage specification ensures that the SCR can withstand rapid changes in voltage, making it suitable for dynamic applications.

Maximum Holding Current: 5 mA

The high holding current capability ensures that the SCR remains in the on-state even in the presence of fluctuating currents, providing stability to the system.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TICP106M attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

15 A

Maximum On-state Current:

2 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TICP106M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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