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MCR100-8G

Onsemi

MCR100-8G by Onsemi

MCR100-8G by Onsemi is a single SCR with a max on-state current of 0.8A and non-repetitive peak on-state current of 10A. It is used in applications requiring a trigger device with a max DC gate trigger voltage of 0.8V, such as power control circuits for temperatures ranging from -40 to 110°C.

Median Price

$0.145

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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Galco

USA . 17 parts In-Stock

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$0.040

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DigiKey Marketplace

USA . 17 parts In-Stock

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$0.050

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$0.050

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Freelance Electronics

USA . 390 parts In-Stock

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$0.240

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$0.240

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Component Electronics Inc.

Canada . 866 parts In-Stock

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$0.770

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$0.580

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$0.500

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866

$0.770

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Vyrian

USA . 3,556 parts In-Stock

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Bristol Electronics

USA . 3,083 parts In-Stock

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PC Components Company LLC

USA . 2,958 parts In-Stock

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Digiode

USA . 2,298 parts In-Stock

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LWI Electronics Inc

India . 300 parts In-Stock

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300

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

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Corohmni

South Africa . 160 parts In-Stock

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$0.040

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160

$0.040

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Aztec Data Supply Inc.

USA . 1,553 parts In-Stock

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$4.230

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$4.230

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Ampacity Inc.

Singapore . 1,587 parts In-Stock

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$17.100

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Semicontronic

India . 1,480 parts In-Stock

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$18.100

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$17.648

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$17.557

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AZTECH Wire

Italy . 659 parts In-Stock

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$18.919

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Component Stockers USA

USA . 450 parts In-Stock

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$99.990

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Perfect Parts

USA . 60,118 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 5,580 parts In-Stock

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Kulean Microsystems

USA . 5,049 parts In-Stock

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SupplyDigital Components

Austria . 3,638 parts In-Stock

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TANS Electronics

Latvia . 3,247 parts In-Stock

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Corphita

USA . 2,485 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,220 parts In-Stock

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Continental Prestige Electronics

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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Argo Parts USA

USA . 985 parts In-Stock

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UHIMA Technologies

Türkiye . 834 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Discover the power of the Onsemi MCR100-8G Silicon Controlled Rectifier (SCR) - a high-quality component built to deliver exceptional performance in a wide range of applications. With Onsemi's reputation for reliability and innovation, you can trust that this SCR will meet your needs with ease. Whether you're looking to control power in industrial machinery or regulate voltage in consumer electronics, the MCR100-8G offers value, efficiency, and versatility that will give you a competitive edge. Upgrade your systems today with the Onsemi MCR100-8G and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Allows for a lightweight and durable design, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

Provides precise control over the gate triggering process.

Configuration: SINGLE

Simplifies the setup and operation of the SCR.

Non Repetitive Peak On-state Current: 10 A

Capable of handling high current surges, ensuring reliability in demanding conditions.

Package Shape: ROUND

Facilitates easy installation and heat dissipation.

Terminal Form: THROUGH-HOLE

Enables secure PCB mounting and connection.

Maximum On-state Current: 0.8 A

Suitable for medium to high power applications.

Maximum Leakage Current: 0.1 mA

Ensures minimal power loss when the SCR is in off-state.

Repetitive Peak Reverse Voltage: 600 V

Allows for operation in high voltage environments.

No. of Terminals: 3

Provides the necessary connections for proper function.

Package Style (Meter): CYLINDRICAL

Enhances mechanical strength and ease of handling.

Maximum Operating Temperature: 110 °C

Can withstand high temperature environments without performance degradation.

Trigger Device Type: SCR

Reliable and robust device for controlling power in circuits.

Minimum Operating Temperature: -40 °C

Suitable for use in harsh cold conditions.

Terminal Finish: TIN SILVER COPPER

Provides excellent conductivity and corrosion resistance.

Terminal Position: BOTTOM

Facilitates easy integration into circuit boards.

Maximum RMS On-state Current: 0.8 A

Sufficient current handling capacity for various applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage for efficient operation.

Repetitive Peak Off-state Voltage: 600 V

Ensures reliable off-state voltage handling.

Maximum Holding Current: 5 mA

Ensures the SCR remains in on-state under specified conditions.

Peak Reflow Temperature °C: 260

Withstands high temperature reflow processes during manufacturing.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR100-8G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR100-8G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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