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2N1602

Texas Instruments

2N1602 by Texas Instruments

2N1602 by Texas Instruments is a Silicon Controlled Rectifier with 10mA DC Gate Trigger Current, 25A Non Repetitive Peak On-state Current, and 3A Max On-state Current. It operates b/w -60°C to 125°C and has a max DC Gate Trigger Voltage of 3V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

$15.840

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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DigiKey

USA . 50 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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$15.840

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$14.620

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$12.989

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Vyrian

USA . 7,013 parts In-Stock

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Digiode

USA . 2,105 parts In-Stock

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Electronic Expediters

USA . 109 parts In-Stock

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Mil-Aero Solutions, Inc.

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Pride Electronics

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First Choice Components Inc.

USA . 9 parts In-Stock

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Resion

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DF Sales Co.

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Native Components

USA . 162 parts In-Stock

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$0.171

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$0.165

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Northwest PG Solutions

USA . 1,943 parts In-Stock

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$0.189

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Parana Technologies

USA . 2,153 parts In-Stock

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$3.658

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$4.164

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DigiPath Technology Company

USA . 1,133 parts In-Stock

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$4.028

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$3.706

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ChromeModa Solutions

Germany . 2,821 parts In-Stock

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$4.110

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$3.370

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IDEA Electronic Components Group

UK . 1,752 parts In-Stock

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$3.699

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Microchip USA

USA . 3,757 parts In-Stock

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$21.468

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Corphita

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Overview

Unlock the power of advanced electronics with the 2N1602 by Texas Instruments. As a leader in semiconductor technology, Texas Instruments delivers top-quality Silicon Controlled Rectifiers (SCR) like the 2N1602, designed for reliability and performance. Ideal for a wide range of applications, this SCR offers superior efficiency and durability. Experience seamless operation and peace of mind knowing your electronics are in good hands with Texas Instruments. Elevate your projects with the 2N1602 and discover the difference quality makes.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

The low gate trigger current ensures efficient and reliable operation of the SCR.

Non Repetitive Peak On-state Current: 25 A

The high non-repetitive peak on-state current capability allows this SCR to handle sudden surges in current without damage.

Maximum On-state Current: 3 A

With a maximum on-state current of 3A, this SCR is suitable for applications requiring moderate current loads.

Maximum Leakage Current: 1 mA

The low leakage current ensures minimal power loss when the SCR is in the off state.

Maximum Operating Temperature: 125 °C

The high operating temperature range of 125°C makes this SCR suitable for use in various industrial environments.

Trigger Device Type: SCR

Being an SCR, this device offers superior performance and reliability in controlling electrical power.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C allows this SCR to be used in cold environments without issues.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement of 3V ensures efficient control and triggering of the SCR.

Repetitive Peak Off-state Voltage: 200 V

The high repetitive peak off-state voltage capacity of 200V allows this SCR to handle high voltage applications effectively.

Maximum Holding Current: 25 mA

The high holding current capability of 25 mA ensures the SCR remains in the on-state even in the presence of slight fluctuations in current.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1602 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

25 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

25 A

Maximum On-state Current:

3 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1602 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

2815-01-104-4100, 2815011044100, 5961-00-875-7925, 5961008757925

NIIN

011044100, 008757925

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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