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TIC126M

Texas Instruments

TIC126M by Texas Instruments

TIC126M by Texas Instruments is a single SCR with max DC gate trigger current of 20mA, on-state current of 12A, and off-state voltage of 600V. It is used in applications requiring high power control such as motor drives and industrial heating systems.

Median Price

$3.414

Lifecycle Status

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1k+

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Distrelec

Netherlands . 92 parts In-Stock

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$2.472

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Component Electronics Inc.

Canada . 41 parts In-Stock

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$1.540

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Digiode

USA . 821 parts In-Stock

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Vyrian

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Fibra_Brandt Electronic GMBH

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A&K Electronics

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Rotakorn

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Bristol Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Manotoh

Italy . 112 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 109 parts In-Stock

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ECAB

Sweden . 82 parts In-Stock

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GES GmbH

Germany . 59 parts In-Stock

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Sunrise Surplus Inc.

USA . 55 parts In-Stock

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Rebound Electronics

UK . 50 parts In-Stock

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Halfin

Belgium . 40 parts In-Stock

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LittleDiode

UK . 29 parts In-Stock

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ComSIT Distribution GmbH

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Holdelec - ElecDif-Pro

France . 21 parts In-Stock

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Flex Direct, LLC

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PC Components Company LLC

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Distributors (Availability)

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Corphita

USA . 258 parts In-Stock

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$3.073

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258

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Parana Technologies

USA . 1,038 parts In-Stock

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$3.888

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$361.098

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$3.500

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$3.888

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DigiPath Technology Company

USA . 360 parts In-Stock

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$4.282

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$3.939

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IDEA Electronic Components Group

UK . 2,163 parts In-Stock

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$4.369

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$3.932

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ChromeModa Solutions

Germany . 139 parts In-Stock

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$4.369

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$3.583

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A-Z Elektronik GmbH

Germany . 6,288 parts In-Stock

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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Assy Fe

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Overview

Discover the cutting-edge TIC126M by Texas Instruments, a high-quality Silicon Controlled Rectifier (SCR) that offers unrivaled performance and reliability. With a single configuration and a maximum on-state current of 12A, this product is ideal for a wide range of applications. From industrial equipment to power control systems, the TIC126M ensures seamless operation and optimal efficiency. Trust in Texas Instruments' renowned expertise and innovation to deliver a premium solution that exceeds expectations. Upgrade your systems today and experience the superior value and benefits that the TIC126M brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body enhances durability and reliability of the product, making it a good choice for long-term use.

Maximum DC Gate Trigger Current: 20 mA

The high maximum DC gate trigger current allows for efficient control and triggering of the SCR, ensuring reliable performance in various applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making this SCR easy to integrate into different systems.

Repetitive Peak On-state Current: 100 A

With a high repetitive peak on-state current, this SCR can handle heavy loads and high currents, making it suitable for industrial applications.

Maximum On-state Current: 12 A

The maximum on-state current of 12 A allows for efficient conduction and control of current flow, making this SCR ideal for a range of power electronics applications.

Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage rating of 600 V provides robust protection against reverse voltage spikes, ensuring the reliability and longevity of the SCR.

Maximum RMS On-state Current: 12 A

The maximum RMS on-state current of 12 A indicates the continuous current-carrying capacity of the SCR, making it suitable for steady-state operation in various systems.

Maximum Holding Current: 40 mA

The maximum holding current of 40 mA ensures stable operation and latching of the SCR in on-state, adding to the reliability and performance of the product.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC126M attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

12 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC126M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-257-0513, 5961012570513

NIIN

012570513

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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