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2N3003

Texas Instruments

2N3003 by Texas Instruments

2N3003 by Texas Instruments is a SCR with max. DC Gate Trigger Current of 0.02 mA, Non Repetitive Peak On-state Current of 6 A, and Max. Leakage Current of 0.1 mA. Ideal for applications requiring high current switching in industrial equipment or power control systems.

Median Price

$6.317

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 1 parts In-Stock

1+ parts

$4.174

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-

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1

$4.174

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Bristol Electronics

USA . 350 parts In-Stock

1+ parts

$8.460

100+ parts

$5.076

1k+ parts

$4.864

10k+ parts

-

350

$8.460

$5.076

$4.864

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Vyrian

USA . 4,940 parts In-Stock

1+ parts

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4,940

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Digiode

USA . 2,784 parts In-Stock

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2,784

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Mil-Aero Solutions, Inc.

USA . 5 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 149 parts In-Stock

1+ parts

$1.570

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149

$1.570

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Northwest PG Solutions

USA . 784 parts In-Stock

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$1.727

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784

$1.727

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Parana Technologies

USA . 506 parts In-Stock

1+ parts

$1.826

100+ parts

$169.598

1k+ parts

$1.644

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506

$1.826

$169.598

$1.644

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DigiPath Technology Company

USA . 486 parts In-Stock

1+ parts

$2.011

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486

$2.011

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ChromeModa Solutions

Germany . 5,530 parts In-Stock

1+ parts

$2.052

100+ parts

$1.683

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5,530

$2.052

$1.683

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IDEA Electronic Components Group

UK . 1,432 parts In-Stock

1+ parts

$2.052

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$1.847

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$2.052

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One Stop Electronics

USA . 1,463 parts In-Stock

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$2.100

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$2.100

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AZTECH Wire

Italy . 575 parts In-Stock

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$6.167

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575

$6.167

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Corphita

USA . 985 parts In-Stock

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985

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Overview

Experience top-notch quality and reliability with the Texas Instruments 2N3003 Silicon Controlled Rectifier (SCR). As a trusted manufacturer in the industry, Texas Instruments delivers cutting-edge technology for a wide range of applications. With its high performance and durability, the 2N3003 offers unmatched value and benefits to customers seeking a reliable solution for their electronic needs. Trust in Texas Instruments to provide you with the quality and innovation you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: METAL

Metal body provides better heat dissipation, making the SCR more durable and reliable for long-term use.

Maximum DC Gate Trigger Current: 0.02 mA

Low gate trigger current allows for efficient and precise control of the SCR, making it suitable for various applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and enhances the overall reliability of the SCR.

Repetitive Peak On-state Current: 6 A

High on-state current capability allows the SCR to handle heavy loads and high-power applications effectively.

Terminal Form: WIRE

Wire terminals make it easy to connect the SCR in the circuit, providing convenience during installation and maintenance.

Maximum On-state Current: 0.25 A

With a high maximum on-state current, this SCR can reliably switch and control moderate loads without overheating.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, leading to higher efficiency.

Repetitive Peak Reverse Voltage: 100 V

The high reverse voltage rating makes the SCR suitable for applications requiring reverse voltage protection or AC voltage control.

Maximum Operating Temperature: 155 °C

High operating temperature range allows the SCR to function reliably in harsh environments without performance degradation.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise and controlled switching capabilities for various electronic applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3003 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

FAST SWITCHING SPEED

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.02 mA

Maximum DC Gate Trigger Voltage:

.7 V

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.25 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.35 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N3003 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-943-9229, 5961009439229

NIIN

009439229

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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