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2N3002

Texas Instruments

2N3002 by Texas Instruments

2N3002 by Texas Instruments is a single SCR with max. DC gate trigger current of 0.02mA and non-repetitive peak on-state current of 6A. It has a package style of cylindrical metal body, suitable for applications requiring controlled rectification in circuits with low currents and voltages.

Median Price

$15.825

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 5 parts In-Stock

1+ parts

$14.400

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5

$14.400

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American Microsemiconductor Inc.

USA . 41 parts In-Stock

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$17.250

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$17.250

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Vyrian

USA . 5,885 parts In-Stock

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5,885

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Digiode

USA . 2,658 parts In-Stock

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2,658

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PUI

USA . 24 parts In-Stock

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24

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Manoshevitz Elec. Sales

Israel . 12 parts In-Stock

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ECAB

Sweden . 8 parts In-Stock

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Prism Electronics

USA . 4 parts In-Stock

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Van Brakel Electronic

USA . 2 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 502 parts In-Stock

1+ parts

$0.438

100+ parts

-

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$0.420

502

$0.438

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$0.420

Northwest PG Solutions

USA . 480 parts In-Stock

1+ parts

$0.481

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$0.424

480

$0.481

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$0.424

Parana Technologies

USA . 396 parts In-Stock

1+ parts

$2.002

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$2.529

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396

$2.002

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$2.529

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DigiPath Technology Company

USA . 2,352 parts In-Stock

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$2.205

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$2.205

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IDEA Electronic Components Group

UK . 1,209 parts In-Stock

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$2.250

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$2.025

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$2.025

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ChromeModa Solutions

Germany . 79 parts In-Stock

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$2.250

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$1.845

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79

$2.250

$1.845

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AZTECH Wire

Italy . 398 parts In-Stock

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$6.990

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398

$6.990

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One Stop Electronics

USA . 1,051 parts In-Stock

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$30.100

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1,051

$30.100

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Corphita

USA . 4,910 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Overview

Experience the reliability and performance of Texas Instruments with the 2N3002 Silicon Controlled Rectifier. Designed for a range of applications, this SCR offers superior quality and efficiency. With a maximum on-state current of 0.25 A and non-repetitive peak on-state current of 6 A, this product provides value and benefits that customers can rely on. Trust in Texas Instruments for top-notch semiconductor solutions that deliver exceptional results in every use.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.02 mA

Low gate trigger current allows for efficient control over switching the SCR on and off, making the product suitable for various applications.

Non Repetitive Peak On-state Current: 6 A

High non repetitive peak on-state current capability ensures that the SCR can handle sudden surges of current without failing, making it reliable in demanding situations.

Maximum On-state Current: 0.25 A

The maximum on-state current rating of 0.25 A allows for effective current conduction while ensuring the SCR does not exceed its limits, leading to a longer lifespan of the product.

Repetitive Peak Reverse Voltage: 60 V

The repetitive peak reverse voltage of 60 V offers protection against reverse voltage spikes, enhancing the durability and reliability of the SCR in various circuit configurations.

Maximum Operating Temperature: 155 °C

With a high maximum operating temperature of 155°C, this SCR can withstand elevated temperatures, making it suitable for demanding industrial environments.

Maximum RMS On-state Current: 0.35 A

The maximum RMS on-state current rating of 0.35 A ensures efficient current conduction while operating within safe limits, making the product a reliable choice for continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3002 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

FAST SWITCHING SPEED

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.02 mA

Maximum DC Gate Trigger Voltage:

.7 V

Maximum Holding Current:

3 mA

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.25 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.35 A

Repetitive Peak Off-state Voltage:

60 V

Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N3002 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-052-8409, 5961000528409

NIIN

000528409

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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