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2N3004

Texas Instruments

2N3004 by Texas Instruments

2N3004 by Texas Instruments is a SCR with max. DC Gate Trigger Current of 0.02 mA, Non Repetitive Peak On-state Current of 6 A, and Max. RMS On-state Current of 0.35 A. It is used in applications requiring high current switching capabilities such as power control circuits.

Median Price

$21.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 42 parts In-Stock

1+ parts

$21.000

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42

$21.000

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Vyrian

USA . 4,516 parts In-Stock

1+ parts

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4,516

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Digiode

USA . 1,921 parts In-Stock

1+ parts

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1,921

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Electronic Expediters

USA . 10 parts In-Stock

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-

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 738 parts In-Stock

1+ parts

$2.780

100+ parts

-

1k+ parts

$3.264

10k+ parts

-

738

$2.780

-

$3.264

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DigiPath Technology Company

USA . 537 parts In-Stock

1+ parts

$3.062

100+ parts

$2.817

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537

$3.062

$2.817

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One Stop Electronics

USA . 290 parts In-Stock

1+ parts

$3.100

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290

$3.100

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ChromeModa Solutions

Germany . 6,883 parts In-Stock

1+ parts

$3.124

100+ parts

$2.562

1k+ parts

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6,883

$3.124

$2.562

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IDEA Electronic Components Group

UK . 1,116 parts In-Stock

1+ parts

$3.124

100+ parts

-

1k+ parts

$2.812

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1,116

$3.124

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$2.812

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AZTECH Wire

Italy . 275 parts In-Stock

1+ parts

$7.758

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275

$7.758

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Corphita

USA . 4,878 parts In-Stock

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4,878

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Northwest PG Solutions

USA . 1,546 parts In-Stock

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1,546

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Native Components

USA . 702 parts In-Stock

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702

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Kepictronics

USA . 252 parts In-Stock

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252

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Overview

Unlock the power of reliable and efficient electrical control with the 2N3004 Silicon Controlled Rectifier by Texas Instruments. Manufactured with precision and expertise, this SCR offers unparalleled performance and durability. Ideal for a wide range of applications, this product delivers exceptional value and benefits to customers seeking quality and reliability in their electronic components. Trust Texas Instruments to provide you with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and better heat dissipation, making the SCR more reliable and suitable for high temperature environments.

Maximum DC Gate Trigger Current: 0.02 mA

Low gate trigger current ensures efficient gate control and helps in conserving energy.

Configuration: SINGLE

Single configuration simplifies the installation process and reduces complexity in circuit design.

Non Repetitive Peak On-state Current: 6 A

High peak current capability allows the SCR to handle surge currents effectively, making it suitable for applications requiring robust performance.

Package Shape: ROUND

Round package shape facilitates easy mounting and handling, making it suitable for various applications.

Terminal Form: WIRE

Wire terminals offer easy connectivity and flexibility in installation, enabling quick and reliable connections.

Maximum On-state Current: 0.25 A

Relatively high on-state current rating ensures efficient operation and allows the device to handle moderate current loads.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes power loss and enhances the overall efficiency of the SCR.

Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating provides reliable protection against reverse voltage spikes, ensuring the SCR's longevity and robust performance.

No. of Terminals: 3

Having 3 terminals allows for easy control and connection in the circuit, enhancing the versatility and usability of the SCR.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compactness and easy integration into various electronic devices and systems.

Maximum Operating Temperature: 155 °C

High maximum operating temperature range allows the SCR to perform reliably in challenging temperature conditions.

Trigger Device Type: SCR

Being an SCR, it offers precise switching control and high reliability for diverse applications.

Minimum Operating Temperature: -60 °C

Wide temperature range enables the SCR to operate in extreme cold conditions, making it suitable for a variety of environments.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and connection, enhancing the SCR's practicality and ease of use.

Maximum RMS On-state Current: 0.35 A

High RMS current rating allows the SCR to handle continuous AC currents effectively, making it suitable for various power control applications.

Maximum DC Gate Trigger Voltage: 0.7 V

Low gate trigger voltage ensures efficient and reliable triggering of the SCR, enhancing its overall performance and responsiveness.

Case Connection: ANODE

Anode case connection provides easy mounting and installation, simplifying the overall circuit design and connection process.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating ensures robust insulation and protection against voltage spikes, enhancing the SCR's reliability in various applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3004 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

FAST SWITCHING SPEED

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.02 mA

Maximum DC Gate Trigger Voltage:

.7 V

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.25 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.35 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N3004 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-110-9052, 5961001109052

NIIN

001109052

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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