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2N3005

Texas Instruments

2N3005 by Texas Instruments

2N3005 by Texas Instruments is a Silicon Controlled Rectifier with max DC gate trigger current of 0.2 mA, non-repetitive peak on-state current of 6 A, and max on-state current of 0.25 A. It is used in applications requiring SCR devices for power control circuits due to its single configuration and round package shape.

Median Price

$16.830

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 400 parts In-Stock

1+ parts

$13.660

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400

$13.660

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Ace Electronics

USA . 3 parts In-Stock

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$20.000

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3

$20.000

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Vyrian

USA . 7,079 parts In-Stock

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7,079

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Digiode

USA . 2,813 parts In-Stock

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2,813

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PUI

USA . 81 parts In-Stock

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81

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LittleDiode

UK . 1 parts In-Stock

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1

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Electronics Depot

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,083 parts In-Stock

1+ parts

$2.813

100+ parts

-

1k+ parts

$3.299

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2,083

$2.813

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$3.299

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DigiPath Technology Company

USA . 2,008 parts In-Stock

1+ parts

$3.098

100+ parts

$2.850

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2,008

$3.098

$2.850

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One Stop Electronics

USA . 603 parts In-Stock

1+ parts

$3.100

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603

$3.100

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ChromeModa Solutions

Germany . 3,761 parts In-Stock

1+ parts

$3.161

100+ parts

$2.592

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3,761

$3.161

$2.592

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IDEA Electronic Components Group

UK . 282 parts In-Stock

1+ parts

$3.161

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$2.845

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282

$3.161

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$2.845

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AZTECH Wire

Italy . 384 parts In-Stock

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$17.109

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384

$17.109

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Corphita

USA . 1,448 parts In-Stock

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1,448

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Northwest PG Solutions

USA . 1,421 parts In-Stock

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Native Components

USA . 262 parts In-Stock

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262

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Overview

Unlock the power of reliable and high-quality electronics with the 2N3005 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch Silicon Controlled Rectifiers that provide enhanced performance and durability. Perfect for a wide range of applications, this SCR offers customers unmatched value and benefits. Trust Texas Instruments to deliver superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body material provides durability and heat dissipation, making the SCR suitable for high temperature environments.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient and precise switching control of the SCR.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and allows for easy integration into various systems.

Repetitive Peak On-state Current: 6 A

High on-state current handling capability enables the SCR to withstand heavy loads and deliver reliable performance.

Terminal Form: WIRE

Wire terminals provide secure connections and easy installation of the SCR in different applications.

Maximum On-state Current: 0.25 A

The maximum on-state current rating ensures safe operation of the SCR under specified conditions.

Maximum Leakage Current: 0.1 mA

Low leakage current enhances the efficiency and reliability of the SCR during operation.

Repetitive Peak Reverse Voltage: 30 V

The repetitive peak reverse voltage rating ensures the SCR can handle reverse voltage spikes without damage.

Maximum Operating Temperature: 155 °C

High maximum operating temperature allows the SCR to operate in demanding environments without performance degradation.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier) ensures reliable and precise control of power in various electronic circuits.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3005 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

SENSITIVE GATE, FAST SWITCHING SPEED

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.25 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.35 A

Repetitive Peak Off-state Voltage:

30 V

Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N3005 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-228-6811, 5961002286811, 5961-99-651-6956, 5961996516956

NIIN

002286811, 996516956

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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