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2N2324

Texas Instruments

2N2324 by Texas Instruments

2N2324 by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 1.6A, non-repetitive peak on-state current of 15A, and max DC gate trigger voltage of 0.8V. It is used as a trigger device in applications requiring SCR functionality at temperatures ranging from -65 to 125°C.

Median Price

$7.060

Lifecycle Status

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RS Americas

USA . 22 parts In-Stock

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Digiode

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American Microsemiconductor Inc.

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Bristol Electronics

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Vyrian

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A2Z Electronics, Inc.

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PC Components Company LLC

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ICP Electronique

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Corel Iberica Componentes, S.L.

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

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Electronics Depot

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Odi Ramu Company

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Sunrise Surplus Inc.

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Electro Mavin

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LittleDiode

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J & M Industries LLC

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MISTER SPROCKETS

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Native Components

USA . 810 parts In-Stock

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$1.590

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ChromeModa Solutions

Germany . 4,765 parts In-Stock

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$2.589

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$2.123

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IDEA Electronic Components Group

UK . 4,243 parts In-Stock

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Continental Prestige Electronics

USA . 283 parts In-Stock

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Corphita

USA . 1,639 parts In-Stock

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Allen Electronics Distributors

USA . 75 parts In-Stock

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DigiPath Technology Company

USA . 4,035 parts In-Stock

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MKK Technologies

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Northwest PG Solutions

USA . 1,759 parts In-Stock

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$7.861

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Component Stockers USA

USA . 577 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Parana Technologies

USA . 3,820 parts In-Stock

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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RTC Component Inc.

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Overview

Discover the power of the Texas Instruments 2N2324 Silicon Controlled Rectifier! With a reputation for quality and reliability, Texas Instruments delivers cutting-edge technology in the field of semiconductor devices. The 2N2324 offers unmatched performance in a variety of applications, from power control to motor drives. Customers can trust in the value and benefits of this SCR, providing efficient and precise control in their electronic systems. Choose Texas Instruments for superior quality and performance that meets your needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

The low gate trigger current allows for precise control and triggering of the silicon controlled rectifier, ensuring reliable performance.

Non Repetitive Peak On-state Current: 15 A

The high non repetitive peak on-state current capability allows the silicon controlled rectifier to handle sudden surges of current without damage, making it suitable for heavy-duty applications.

Maximum On-state Current: 1.6 A

With a maximum on-state current of 1.6 A, this silicon controlled rectifier can efficiently handle moderate levels of current flow, making it versatile for a range of applications.

Maximum Leakage Current: 0.1 mA

The low leakage current ensures minimal power loss and heat generation when the silicon controlled rectifier is in the off-state, contributing to energy efficiency.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the silicon controlled rectifier to function reliably even in elevated temperature environments, improving its overall durability.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature capability ensures that the silicon controlled rectifier remains operational in extremely cold conditions, increasing its usability in various settings.

Maximum DC Gate Trigger Voltage: 0.8 V

The low gate trigger voltage requirement facilitates easier integration with control circuits and microcontrollers, enhancing the overall efficiency of the system.

Repetitive Peak Off-state Voltage: 100 V

The repetitive peak off-state voltage capacity of 100 V enables the silicon controlled rectifier to withstand voltage spikes and fluctuations, enhancing the overall reliability of the device.

Maximum Holding Current: 2 mA

The maximum holding current of 2 mA ensures that the silicon controlled rectifier maintains its on-state conduction even in the presence of slight variations in current levels, contributing to stable performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N2324 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

2 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

15 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N2324 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-904-6386, 5961009046386, 5961-00-484-4610, 5961004844610, 5961-00-830-2155, 5961008302155, 5961-00-985-8929, 5961009858929, 5961-15-054-1809, 5961150541809

NIIN

009046386, 004844610, 008302155, 009858929, 150541809

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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