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2N2326

Texas Instruments

2N2326 by Texas Instruments

2N2326 by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 1.6A, trigger voltage of 0.8V, and operating temp range from -65 to 125°C. Ideal for applications requiring precise gate control in circuits with low power consumption.

Median Price

$15.390

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Element14

Singapore . 4 parts In-Stock

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$15.390

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$6.000

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Freelance Electronics

USA . 6 parts In-Stock

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$3.748

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Digiode

USA . 3,859 parts In-Stock

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Bristol Electronics

USA . 838 parts In-Stock

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$14.850

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$8.539

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$14.850

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American Microsemiconductor Inc.

USA . 10 parts In-Stock

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$26.860

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Vyrian

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Anansix

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PUI

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Huijzer Components

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ComSIT Distribution GmbH

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ECAB

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Corel Iberica Componentes, S.L.

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ZD Integrated Circuits Inc.

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Fibra_Brandt Electronic GMBH

Germany . 40 parts In-Stock

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ICP Electronique

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Electronic Expediters

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Holdelec - ElecDif-Pro

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DigiKey Marketplace

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ACDS - Activité Composants Distribution Service

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Resion

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Electronics Depot

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Lakeview Electronics

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LittleDiode

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IDEA Electronic Components Group

UK . 2,608 parts In-Stock

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$2.074

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$1.866

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DigiPath Technology Company

USA . 3,628 parts In-Stock

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$3.899

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MKK Technologies

India . 1,834 parts In-Stock

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$3.899

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ChromeModa Solutions

Germany . 1,698 parts In-Stock

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$4.282

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$3.511

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Corphita

USA . 4,803 parts In-Stock

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$5.013

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Continental Prestige Electronics

USA . 169 parts In-Stock

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Component Stockers USA

USA . 316 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

USA . 3,354 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Northwest PG Solutions

USA . 2,745 parts In-Stock

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Supply Digital

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Native Components

USA . 1,428 parts In-Stock

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$2.484

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Parana Technologies

USA . 1,141 parts In-Stock

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$2.479

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Assy Fe

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RTC Component Inc.

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Overview

Discover the innovative 2N2326 by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier designed for unrivaled performance. With a focus on quality and reliability, Texas Instruments has crafted a product that exceeds industry standards. Ideal for various applications, this SCR offers unmatched value with its impressive features and benefits. Elevate your projects with the 2N2326, where precision meets excellence.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient and precise control of the SCR, leading to reliable performance under various operating conditions.

Non Repetitive Peak On-state Current: 15 A

High on-state current handling capability allows this SCR to be used in applications where robust and intermittent high power loads are required.

Maximum On-state Current: 1.6 A

The maximum on-state current of 1.6 A indicates the SCR's ability to handle moderate levels of continuous current, making it suitable for a wide range of electrical applications.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss and improves the overall efficiency of the SCR, making it an energy-efficient choice for electronic circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this SCR can withstand elevated temperatures and is suitable for use in demanding environments with high thermal stress.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over the flow of current in a circuit, making it ideal for applications requiring controlled switching and power regulation.

Repetitive Peak Off-state Voltage: 200 V

The SCR's ability to withstand repetitive peak off-state voltages of up to 200 V ensures its reliability and durability in circuits with fluctuating voltage levels.

Maximum Holding Current: 2 mA

The maximum holding current of 2 mA indicates the SCR's ability to remain in the on-state condition even after the gate trigger signal is removed, ensuring stable operation in continuous current flow applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N2326 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

2 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

15 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N2326 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-252-1066, 5961002521066, 5961-14-258-8434, 5961142588434, 5961-00-951-8760, 5961009518760, 5961-99-118-1341, 5961991181341, 5961-99-118-0180, 5961991180180

NIIN

002521066, 142588434, 009518760, 991181341, 991180180

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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