Loading...

X0402ME

STMicroelectronics

X0402ME by STMicroelectronics

X0402ME by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for high-voltage applications. It supports up to 600 V repetitive peak reverse voltage and 33 A non-repetitive peak on-state current. Operating b/w -45 °C to 125°C, it’s perfect for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,716 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,716

-

-

-

-

Vyrian

USA . 1,919 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,919

-

-

-

-

Anansix

USA . 538 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

538

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 322 parts In-Stock

1+ parts

$2.283

100+ parts

-

1k+ parts

$2.054

10k+ parts

-

322

$2.283

-

$2.054

-

MKK Technologies

India . 1,891 parts In-Stock

1+ parts

$4.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,891

$4.292

-

-

-

DigiPath Technology Company

USA . 1,891 parts In-Stock

1+ parts

$4.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,891

$4.292

-

-

-

Corphita

USA . 1,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,050

-

-

-

-

Parana Technologies

USA . 189 parts In-Stock

1+ parts

-

100+ parts

$2.729

1k+ parts

-

10k+ parts

-

189

-

$2.729

-

-

Overview

Unlock unparalleled performance with the X0402ME from STMicroelectronics, a trusted leader in semiconductor innovation. This Silicon Controlled Rectifier excels in demanding applications, offering exceptional reliability and superior handling of high power loads. With its robust design and resilient temperature range, it ensures seamless operation in diverse environments. Elevate your projects with a component that delivers quality, efficiency, and peace of mind, setting you ahead in today’s competitive landscape.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

A low trigger current requirement allows for easy interfacing with low-power control circuits, improving design flexibility.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces space requirements on the PCB.

Non Repetitive Peak On-state Current: 33 A

This high peak on-state current capability allows the SCR to handle transient conditions effectively, enhancing reliability in demanding applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization within circuitry, making it easier to integrate into compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and enhance thermal dissipation, ensuring reliable connections in high-power applications.

Maximum On-state Current: 4 A

With a maximum on-state current of 4 A, the SCR is suitable for moderate power applications, providing a good balance between performance and size.

Maximum Leakage Current: 0.2 mA

Low leakage current improves energy efficiency and minimizes power loss in circuits, contributing to overall system performance.

Repetitive Peak Reverse Voltage: 600 V

This high reverse voltage rating allows the SCR to be used in high-voltage applications, increasing its versatility across different uses.

No. of Terminals: 3

The three-terminal design simplifies connection and integration into existing circuit architectures, facilitating design modifications.

Package Style (Meter): FLANGE MOUNT

Flange mount style improves thermal management and stability during operation, ideal for applications with higher thermal demands.

Maximum Operating Temperature: 125 °C

The ability to operate at high temperatures allows the device to function effectively in harsh environments, enhancing longevity.

Trigger Device Type: SCR

As an SCR, it provides excellent control over high-power circuits, making it ideal for switching and control applications.

Minimum Operating Temperature: -45 °C

Wide temperature operating range ensures reliable performance in extreme environmental conditions, suitable for outdoor and industrial applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and corrosion resistance, improving reliability and extending the lifecycle of the component.

Terminal Position: SINGLE

Single terminal position helps streamline layout and assembly processes, contributing to ease of manufacturing.

Maximum RMS On-state Current: 4 A

This specification guarantees that the SCR can safely handle significant current loads, useful for a variety of control applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage is beneficial for power efficiency and simplifies the control circuitry requirements.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage ensures the SCR can handle significant voltage spikes, making it reliable for safety-critical applications.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/μs

This capability allows for quick voltage transitions, reducing the risk of unintended triggering and enhancing operational safety.

Maximum Holding Current: 5 mA

Low holding current aids in maintaining operational efficiency, ensuring that the SCR can switch off effectively without excessive current draw.

Technical Specifications

Silicon Controlled Rectifiers (SCR) X0402ME attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-202

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

33 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

4 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

X0402ME Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19