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X0403BE1AA2

STMicroelectronics

X0403BE1AA2 by STMicroelectronics

STMicroelectronics X0403BE1AA2 SCR has 200V repetitive peak reverse voltage, 4A max RMS on-state current, and 0.2mA DC gate trigger current. It is a single SCR used in applications requiring precise power control and switching capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,735 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

2,735

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-

-

Digiode

USA . 1,830 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,830

-

-

-

-

Vyrian

USA . 1,384 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,384

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,074 parts In-Stock

1+ parts

$2.798

100+ parts

-

1k+ parts

$2.518

10k+ parts

-

2,074

$2.798

-

$2.518

-

MKK Technologies

India . 2,020 parts In-Stock

1+ parts

$5.261

100+ parts

-

1k+ parts

-

10k+ parts

-

2,020

$5.261

-

-

-

DigiPath Technology Company

USA . 2,020 parts In-Stock

1+ parts

$5.261

100+ parts

-

1k+ parts

-

10k+ parts

-

2,020

$5.261

-

-

-

Corphita

USA . 1,995 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

-

1,995

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-

-

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Parana Technologies

USA . 406 parts In-Stock

1+ parts

-

100+ parts

$3.345

1k+ parts

-

10k+ parts

-

406

-

$3.345

-

-

Overview

Unleash the power of cutting-edge technology with the X0403BE1AA2 by STMicroelectronics, a top-tier manufacturer known for superior quality and reliability. As a Silicon Controlled Rectifier (SCR), this product offers unparalleled performance in various applications. Experience the seamless integration and enhanced functionality this SCR brings to your projects, providing value, efficiency, and peace of mind. Upgrade your systems with the X0403BE1AA2 and witness the difference it makes in optimizing your operations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures lightweight construction and durability, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

The low trigger current allows for efficient control and operation of the SCR, resulting in optimal performance and reliability.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it easier to integrate into different systems.

Package Shape: RECTANGULAR

The rectangular shape offers a more compact design, saving space and allowing for easy mounting in different devices.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure connections and facilitate soldering, ensuring stable operation and longevity.

Repetitive Peak Reverse Voltage: 200 V

The high reverse voltage capability makes the SCR suitable for applications requiring robust protection against voltage spikes and surges.

No. of Terminals: 3

The three terminals offer flexibility in connection options, allowing for versatile usage in various circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount package style enables easy and secure mounting, ideal for applications where stability and reliability are crucial.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier) ensures precise and controlled switching, making it suitable for applications requiring specific triggering conditions.

Terminal Position: SINGLE

The single terminal position simplifies wiring and connections, reducing the chances of errors and ensuring consistent performance.

Maximum RMS On-state Current: 4 A

The high on-state current rating allows for handling heavy loads with efficiency and reliability, making it suitable for power-heavy applications.

Repetitive Peak Off-state Voltage: 200 V

The high off-state voltage capability ensures reliable blocking of current in off-state conditions, providing enhanced safety and protection.

Technical Specifications

Silicon Controlled Rectifiers (SCR) X0403BE1AA2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

JEDEC-95 Code:

TO-202

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

X0403BE1AA2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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