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2N2687

Texas Instruments

2N2687 by Texas Instruments

2N2687 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.2 mA, Non Repetitive Peak On-state Current of 2 A, and Max On-state Current of 0.18 A. It operates b/w -60 to 155 °C and has a Repetitive Peak Off-state Voltage of 30 V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,080 parts In-Stock

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Digiode

USA . 1,468 parts In-Stock

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Parana Technologies

USA . 267 parts In-Stock

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$2.618

100+ parts

$243.156

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$2.357

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267

$2.618

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$2.357

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DigiPath Technology Company

USA . 2,336 parts In-Stock

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$2.883

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$2.883

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ChromeModa Solutions

Germany . 3,676 parts In-Stock

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$2.942

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$2.412

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IDEA Electronic Components Group

UK . 91 parts In-Stock

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$2.942

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$2.648

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One Stop Electronics

USA . 1,022 parts In-Stock

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$3.100

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$3.100

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AZTECH Wire

Italy . 290 parts In-Stock

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$8.936

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$8.936

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Ampacity Inc.

Singapore . 1,624 parts In-Stock

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$17.100

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$17.100

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Semicontronic

India . 729 parts In-Stock

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$18.100

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$17.648

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$17.557

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729

$18.100

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$17.557

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Corphita

USA . 4,351 parts In-Stock

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Native Components

USA . 749 parts In-Stock

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Northwest PG Solutions

USA . 433 parts In-Stock

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Corohmni

South Africa . 215 parts In-Stock

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Overview

Discover the 2N2687 by Texas Instruments, a high-quality Silicon Controlled Rectifier (SCR) that offers unparalleled performance and reliability. Manufactured by the trusted brand Texas Instruments, this SCR is perfect for a wide range of applications. Whether you're looking to control power in industrial equipment or regulate voltage in electronic devices, the 2N2687 delivers exceptional value with its precise operation and durability. Trust Texas Instruments to provide top-notch semiconductor solutions that meet your needs. Upgrade to the 2N2687 today and experience the difference!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient operation and control of the SCR, making it a reliable choice for various applications.

Non Repetitive Peak On-state Current: 2 A

High peak on-state current capability ensures that the SCR can handle sudden surges in current without malfunctioning, making it suitable for demanding environments.

Maximum On-state Current: 0.18 A

With a high on-state current rating, this SCR can reliably handle continuous current flow, making it ideal for continuous operation in various systems.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss and efficient operation, making this SCR a cost-effective and energy-efficient choice.

Maximum Operating Temperature: 155 °C

High operating temperature tolerance allows this SCR to withstand harsh environmental conditions, making it suitable for a wide range of applications.

Minimum Operating Temperature: -60 °C

Wide operating temperature range enables this SCR to perform reliably in extreme cold conditions, making it versatile and suitable for diverse environments.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage requirement enables efficient control and operation of the SCR, making it suitable for applications where precise triggering is essential.

Repetitive Peak Off-state Voltage: 30 V

High off-state voltage rating ensures that this SCR can withstand voltage spikes without breakdown, making it reliable and durable in various electrical systems.

Maximum Holding Current: 2 mA

With a high holding current specification, this SCR can maintain its on-state conduction even in the presence of varying external conditions, ensuring stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N2687 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

2 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

2 A

Maximum On-state Current:

.18 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

30 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N2687 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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