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TT190N18SOFHPSA1

Infineon Technologies

TT190N18SOFHPSA1 by Infineon Technologies

Infineon's TT190N18SOFHPSA1 is a Silicon Controlled Rectifier with 1800V repetitive peak reverse voltage and 275A max RMS on-state current. It features a series connected, center tap configuration with 2 elements, ideal for high-power applications in industrial systems. Operating temperature ranges from -40°C to 125°C, meeting IEC-747-6 and UL standards.

Median Price

$54.190

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8 parts In-Stock

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$54.190

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$39.362

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8

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$39.362

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Nova Conductors

Japan . 67 parts In-Stock

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$53.533

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Vyrian

USA . 4,873 parts In-Stock

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Digiode

USA . 881 parts In-Stock

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Aztec Data Supply Inc.

USA . 843 parts In-Stock

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$3.077

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843

$3.077

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Corohmni

South Africa . 176 parts In-Stock

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$3.670

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176

$3.670

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Modulus Dynamics

Lithuania . 1,118 parts In-Stock

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$4.519

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$4.338

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$4.157

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1,118

$4.519

$4.338

$4.157

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AZTECH Wire

Italy . 531 parts In-Stock

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$5.104

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Ampacity Inc.

Singapore . 756 parts In-Stock

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$12.100

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Continental Prestige Electronics

USA . 1 parts In-Stock

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$48.740

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Netroflash

USA . 2,000 parts In-Stock

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$53.533

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Microchip USA

USA . 5,883 parts In-Stock

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$137.425

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 4,497 parts In-Stock

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Corphita

USA . 468 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of precision and reliability with the TT190N18SOFHPSA1 from Infineon Technologies. As a leading manufacturer in Silicon Controlled Rectifiers (SCR), Infineon delivers top-quality products that exceed industry standards. Ideal for applications requiring high-performance triggering, this SCR offers unparalleled efficiency and durability. Whether you're in the automotive, industrial, or power electronics sector, the TT190N18SOFHPSA1 provides the value, benefits, and advantages you need to take your projects to the next level. Trust in Infineon for excellence in innovation and performance.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 145 mA

This product has a low gate trigger current, making it efficient and suitable for controlling high power applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements provides better control and stability in the circuit.

Repetitive Peak Reverse Voltage: 1800 V

With a high repetitive peak reverse voltage, this SCR can withstand high reverse voltage conditions, ensuring durability and reliability.

Maximum RMS On-state Current: 275 A

The high maximum RMS on-state current allows this SCR to handle large current loads, making it suitable for high power applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SCR can operate efficiently in various environmental conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TT190N18SOFHPSA1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Case Connection:

Maximum DC Gate Trigger Current:

145 mA

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

275 A

Reference Standard:

IEC-747-6; UL RECOGNIZED

Repetitive Peak Off-state Voltage:

1800 V

Repetitive Peak Reverse Voltage:

1800 V

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TT190N18SOFHPSA1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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