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TDB6HK95N16LOFHOSA1

Infineon Technologies

TDB6HK95N16LOFHOSA1 by Infineon Technologies

TDB6HK95N16LOFHOSA1 by Infineon Technologies is a 3-phase bridge SCR with max on-state voltage of 1.64V, DC gate trigger current of 150mA, and non-repetitive peak on-state current of 720A. It is used in applications requiring high power control such as industrial motor drives and power supplies due to its robust design and high operating temperature range from -40°C to 125°C.

Median Price

$172.070

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2 parts In-Stock

1+ parts

$153.290

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-

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2

$153.290

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Rochester

USA . 42 parts In-Stock

1+ parts

$172.070

100+ parts

$161.750

1k+ parts

$151.420

10k+ parts

-

42

$172.070

$161.750

$151.420

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Verical

USA . 38 parts In-Stock

1+ parts

-

100+ parts

$202.188

1k+ parts

$189.275

10k+ parts

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38

-

$202.188

$189.275

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Distributors (In-Stock)

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Digiode

USA . 407 parts In-Stock

1+ parts

$145.626

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407

$145.626

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TodayComponents

USA . 100 parts In-Stock

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$190.410

100+ parts

$172.110

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100

$190.410

$172.110

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$236.816

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450

$236.816

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Vyrian

USA . 21 parts In-Stock

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21

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 2,051 parts In-Stock

1+ parts

$3.053

100+ parts

$2.931

1k+ parts

$2.809

10k+ parts

-

2,051

$3.053

$2.931

$2.809

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Corohmni

South Africa . 534 parts In-Stock

1+ parts

$3.223

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-

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534

$3.223

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Aztec Data Supply Inc.

USA . 1,633 parts In-Stock

1+ parts

$3.530

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-

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1,633

$3.530

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AZTECH Wire

Italy . 798 parts In-Stock

1+ parts

$11.010

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798

$11.010

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Semicontronic

India . 21 parts In-Stock

1+ parts

$130.300

100+ parts

$127.042

1k+ parts

$126.391

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21

$130.300

$127.042

$126.391

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Corphita

USA . 602 parts In-Stock

1+ parts

$137.961

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602

$137.961

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Continental Prestige Electronics

USA . 235 parts In-Stock

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$236.816

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$232.080

235

$236.816

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$232.080

Netroflash

USA . 100 parts In-Stock

1+ parts

$236.816

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$224.975

10k+ parts

$220.239

100

$236.816

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$224.975

$220.239

Microchip USA

USA . 6,526 parts In-Stock

1+ parts

$378.525

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6,526

$378.525

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 4,973 parts In-Stock

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4,973

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Robosynatics

Brazil . 150 parts In-Stock

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150

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Lucentia Tech

USA . 150 parts In-Stock

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150

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Perfect Parts

USA . 13 parts In-Stock

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13

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Overview

Discover the power and reliability of the TDB6HK95N16LOFHOSA1 by Infineon Technologies. As a leading manufacturer of Silicon Controlled Rectifiers (SCR), Infineon Technologies delivers top-quality products that are perfect for a wide range of applications. With a maximum on-state voltage of 1.64 V and a non-repetitive peak on-state current of 720 A, this 3-phase bridge configuration offers exceptional performance and durability. Whether you're in need of advanced electronics for industrial, automotive, or consumer electronics, this SCR from Infineon Technologies provides unmatched value, benefits, and advantages to meet all your needs.

Feature Benefit Bullets

Maximum On-state Voltage: 1.64 V

Low on-state voltage helps in reducing power losses and improving efficiency.

Maximum DC Gate Trigger Current: 150 mA

Allows for precise control of the SCR gate triggering, leading to reliable operation.

Configuration: 3 PHASE BRIDGE

Suitable for applications requiring three-phase power conversion, providing balanced output.

Non Repetitive Peak On-state Current: 720 A

High peak current handling capability for handling heavy loads during short duration.

Package Shape: RECTANGULAR

Common package shape for easy mounting and integration into various systems.

No. of Elements: 6

Multiple elements provide redundancy and higher reliability in the overall system.

Maximum Leakage Current: 8 mA

Low leakage current helps in reducing power losses and ensures minimal standby power consumption.

Repetitive Peak Reverse Voltage: 1600 V

High reverse voltage rating for handling back EMF and voltage spikes in the circuit.

No. of Terminals: 12

Sufficient terminals for connecting to external circuitry and facilitating ease of installation.

Package Style (Meter): FLANGE MOUNT

Flange mount package offers secure and stable mounting option for industrial applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures reliable performance in harsh environments.

Trigger Device Type: SCR

SCR technology allows for efficient switching and control of current flow in the circuit.

Repetitive Peak Off-state Voltage: 1600 V

High off-state voltage rating for maintaining isolation and preventing unintended conduction.

Maximum Holding Current: 200 mA

Sufficient holding current to keep the SCR in the on-state without continuous gate triggering.

Nominal Circuit Commutated Turn-off Time: 190 us

Fast turn-off time for quick response and control over the circuit operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TDB6HK95N16LOFHOSA1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

190 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Quick Connects Description:

6G

Screw Terminals Description:

2A-K-3AK

Maximum Holding Current:

200 mA

JESD-30 Code:

R-XUFM-X12

Maximum Leakage Current:

8 mA

Non Repetitive Peak On-state Current:

720 A

No. of Elements:

6

No. of Terminals:

12

Maximum On-state Voltage:

1.64 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

75 A

Reference Standard:

IEC-747-6

Repetitive Peak Off-state Voltage:

1600 V

Repetitive Peak Reverse Voltage:

1600 V

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TDB6HK95N16LOFHOSA1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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