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2N6397T

Onsemi

2N6397T by Onsemi

2N6397T by Onsemi is a SCR with max DC gate trigger current of 30mA, non-repetitive peak on-state current of 100A, and max on-state current of 5A. It is used in applications requiring high power control such as motor drives and industrial automation systems.

Median Price

$0.423

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.423

1k+ parts

$0.351

10k+ parts

$0.313

50

-

$0.423

$0.351

$0.313

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,246 parts In-Stock

1+ parts

$0.330

100+ parts

-

1k+ parts

-

10k+ parts

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1,246

$0.330

-

-

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Vyrian

USA . 3,168 parts In-Stock

1+ parts

-

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3,168

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,987 parts In-Stock

1+ parts

$0.312

100+ parts

-

1k+ parts

-

10k+ parts

-

1,987

$0.312

-

-

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Corohmni

South Africa . 200 parts In-Stock

1+ parts

$0.347

100+ parts

-

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-

200

$0.347

-

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Native Components

USA . 679 parts In-Stock

1+ parts

$68.880

100+ parts

-

1k+ parts

-

10k+ parts

$66.125

679

$68.880

-

-

$66.125

Northwest PG Solutions

USA . 1,166 parts In-Stock

1+ parts

$75.768

100+ parts

-

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1,166

$75.768

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-

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Kulean Microsystems

USA . 6,712 parts In-Stock

1+ parts

-

100+ parts

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6,712

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Problanco Electronics

Mexico . 3,419 parts In-Stock

1+ parts

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3,419

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TANS Electronics

Latvia . 3,418 parts In-Stock

1+ parts

-

100+ parts

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3,418

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SupplyDigital Components

Austria . 2,850 parts In-Stock

1+ parts

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2,850

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Glotronic Ltd.

UK . 2,780 parts In-Stock

1+ parts

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2,780

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UHIMA Technologies

Türkiye . 869 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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869

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Overview

Looking for a reliable Silicon Controlled Rectifier (SCR) to power your electronic devices? Look no further than the 2N6397T by Onsemi! With a maximum on-state current of 5A and a repetitive peak reverse voltage of 400V, this SCR is perfect for various applications. Onsemi's commitment to quality and innovation ensures that you are getting a top-notch product that delivers consistent performance. Trust the 2N6397T to provide the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the SCR, ensuring its durability and reliability.

Maximum DC Gate Trigger Current: 30 mA

The low gate trigger current allows for easy and precise control of the SCR, making it suitable for a wide range of applications.

Non Repetitive Peak On-state Current: 100 A

With a high peak on-state current, this SCR can handle heavy loads and sudden surges in current without malfunctioning.

Maximum On-state Current: 5 A

The maximum on-state current of 5A allows the SCR to effectively control moderate to high power loads.

Repetitive Peak Reverse Voltage: 400 V

The high repetitive peak reverse voltage rating of 400V ensures the SCR can handle reverse voltage spikes without damage.

Maximum RMS On-state Current: 12 A

With a maximum RMS on-state current of 12A, this SCR is suitable for applications that require continuous current flow.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over conduction, making it ideal for applications requiring controlled power delivery.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6397T attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N6397T Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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