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2N6337

Texas Instruments

2N6337 by Texas Instruments

2N6337 by Texas Instruments is a SCR with max. DC Gate Trigger Current of 0.2 mA and Non Repetitive Peak On-state Current of 20 A. It has a Repetitive Peak Reverse Voltage of 400 V, making it suitable for applications requiring high current switching such as power control circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,746 parts In-Stock

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Digiode

USA . 3,147 parts In-Stock

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DF Sales Co.

USA . 17 parts In-Stock

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DF Sales Co.

USA . 17 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 790 parts In-Stock

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$1.536

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790

$1.536

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Northwest PG Solutions

USA . 1,429 parts In-Stock

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$1.690

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$1.690

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Parana Technologies

USA . 75 parts In-Stock

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$3.647

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$338.700

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$3.282

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75

$3.647

$338.700

$3.282

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DigiPath Technology Company

USA . 905 parts In-Stock

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$4.016

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905

$4.016

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ChromeModa Solutions

Germany . 3,277 parts In-Stock

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$4.098

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$3.360

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IDEA Electronic Components Group

UK . 1,562 parts In-Stock

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$4.098

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$3.688

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AZTECH Wire

Italy . 323 parts In-Stock

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$16.633

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One Stop Electronics

USA . 830 parts In-Stock

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$22.100

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Corphita

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Overview

Discover the 2N6337 by Texas Instruments, a top-tier Silicon Controlled Rectifier (SCR) designed to meet your high-quality standards. With a reputation for excellence in innovation and reliability, Texas Instruments delivers superior performance in the field of semiconductors. The 2N6337 is perfect for applications requiring precise control of electrical currents, making it ideal for power supplies, motor control, and lighting systems. Experience the value and benefits this SCR provides, from its efficient operation to its durable construction, ensuring long-lasting performance for your projects. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal body provides durability and efficient heat dissipation, making the SCR suitable for rugged industrial applications.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures reliable and efficient control of the SCR, minimizing power consumption and improving performance.

Configuration: SINGLE

Single configuration simplifies installation and operation of the SCR, making it user-friendly for various applications.

Non Repetitive Peak On-state Current: 20 A

High peak current handling capability allows the SCR to withstand surges and short-term overloads, ensuring reliable operation in demanding conditions.

Package Shape: ROUND

Round package shape facilitates easy mounting and integration of the SCR in different setups, enhancing versatility and flexibility in installation.

Terminal Form: WIRE

Wire terminals provide secure connections and easy wiring options, allowing for convenient setup and maintenance of the SCR in various systems.

Maximum On-state Current: 2 A

Moderate on-state current rating makes the SCR suitable for medium power applications, offering a balance of performance and efficiency.

Maximum Leakage Current: 0.15 mA

Low leakage current helps in minimizing power losses and improving overall energy efficiency of the SCR, making it a cost-effective choice.

Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating ensures reliable operation and protection against voltage spikes or reverse polarity, enhancing the durability of the SCR.

No. of Terminals: 3

Three terminals provide easy connection options and flexibility in circuit design, making the SCR suitable for various control and switching applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact design and efficient space utilization, allowing for easy integration of the SCR in different setups.

Maximum Operating Temperature: 150 °C

High operating temperature rating ensures reliable performance in extreme environments, making the SCR suitable for industrial applications with elevated temperatures.

Trigger Device Type: SCR

SCR technology provides fast and reliable switching for high power applications, ensuring efficient control and operation of electrical circuits.

Minimum Operating Temperature: -40 °C

Low operating temperature rating enables the SCR to function in cold environments without compromising performance, improving its versatility for diverse applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and secure connections, enhancing the stability and reliability of the SCR in varied installations.

Maximum RMS On-state Current: 2 A

High RMS on-state current rating supports continuous operation and efficient power delivery, making the SCR suitable for continuous duty applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures quick and precise switching of the SCR, enhancing the control accuracy and responsiveness of the device.

Case Connection: ANODE

Anode case connection simplifies the wiring and installation process, providing easy access to the positive terminal for circuit integration.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures reliable isolation and protection of the circuit, making the SCR suitable for high voltage applications.

Maximum Holding Current: 5 mA

Moderate holding current rating allows for stable operation and secure latching of the SCR, ensuring consistent performance in various switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6337 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

SENSITIVE GATE, FAST SWITCHING SPEED

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.15 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N6337 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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