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2N6399TG

Onsemi

2N6399TG by Onsemi

2N6399TG by Onsemi is a single SCR with max DC gate trigger current of 30mA, non-repetitive peak on-state current of 100A, and repetitive peak reverse voltage of 800V. It is used in applications requiring high power control such as industrial motor drives and lighting systems.

Median Price

$1.050

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 4,558 parts In-Stock

1+ parts

$1.050

100+ parts

$0.684

1k+ parts

$0.664

10k+ parts

-

4,558

$1.050

$0.684

$0.664

-

Mouser Electronics

USA . 1,018 parts In-Stock

1+ parts

$1.990

100+ parts

$0.864

1k+ parts

$0.688

10k+ parts

-

1,018

$1.990

$0.864

$0.688

-

DigiKey

USA . 607 parts In-Stock

1+ parts

$1.990

100+ parts

$0.864

1k+ parts

$0.633

10k+ parts

$0.601

607

$1.990

$0.864

$0.633

$0.601

Arrow

USA . 606 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.631

10k+ parts

$0.611

606

-

-

$0.631

$0.611

Verical

USA . 606 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.631

10k+ parts

$0.611

606

-

-

$0.631

$0.611

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 288 parts In-Stock

1+ parts

$0.587

100+ parts

-

1k+ parts

-

10k+ parts

-

288

$0.587

-

-

-

Digiode

USA . 1,562 parts In-Stock

1+ parts

$0.998

100+ parts

-

1k+ parts

-

10k+ parts

-

1,562

$0.998

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 7 parts In-Stock

1+ parts

$0.670

100+ parts

-

1k+ parts

-

10k+ parts

-

7

$0.670

-

-

-

Corphita

USA . 2,460 parts In-Stock

1+ parts

$0.945

100+ parts

-

1k+ parts

-

10k+ parts

-

2,460

$0.945

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$5.716

100+ parts

$5.202

1k+ parts

$4.687

10k+ parts

-

500

$5.716

$5.202

$4.687

-

Native Components

USA . 725 parts In-Stock

1+ parts

$352.260

100+ parts

$345.215

1k+ parts

$341.692

10k+ parts

$338.170

725

$352.260

$345.215

$341.692

$338.170

Northwest PG Solutions

USA . 1,084 parts In-Stock

1+ parts

$5,494.657

100+ parts

-

1k+ parts

-

10k+ parts

-

1,084

$5,494.657

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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11,750

-

-

-

-

TANS Electronics

Latvia . 7,558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,558

-

-

-

-

SupplyDigital Components

Austria . 4,158 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,158

-

-

-

-

Kulean Microsystems

USA . 2,704 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,704

-

-

-

-

UHIMA Technologies

Türkiye . 972 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

972

-

-

-

-

Problanco Electronics

Mexico . 318 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

318

-

-

-

-

Kepictronics

USA . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

300

-

-

-

-

Overview

Unlock the power of reliable and efficient electronics with the Onsemi 2N6399TG Silicon Controlled Rectifier. Manufactured by Onsemi, a trusted leader in semiconductor technology, this SCR offers a multitude of applications for industries seeking quality components. With a maximum DC Gate Trigger Current of 30 mA and a Repetitive Peak Reverse Voltage of 800 V, this single configuration device provides optimal performance and durability. From industrial automation to power supplies, the 2N6399TG delivers superior value and benefits to customers looking for top-notch electronic solutions. Trust Onsemi for your semiconductor needs and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components, making the product long-lasting and reliable.

Maximum DC Gate Trigger Current: 30 mA

The low gate trigger current allows for efficient control of the SCR, ensuring precise operation and minimizing power consumption.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it easy to integrate into various systems and applications.

Repetitive Peak On-state Current: 100 A

With a high repetitive peak on-state current, this SCR can handle large loads and provide robust performance in demanding industrial environments.

Maximum Leakage Current: 2 mA

The low leakage current ensures efficient operation and minimal power loss, making the product energy-efficient and cost-effective.

Repetitive Peak Reverse Voltage: 800 V

The high repetitive peak reverse voltage rating ensures reliable operation and protection against voltage spikes and surges.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the SCR to be used in a wide range of temperature environments, ensuring versatile performance.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR) ensures precise control and reliable switching characteristics, making it suitable for various industrial applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6399TG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

35 us

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N6399TG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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