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2N6399

Onsemi

2N6399 by Onsemi

2N6399 by Onsemi is a SCR with 30mA DC Gate Trigger Current, 100A Non Repetitive Peak On-state Current, and 5A Max On-state Current. It is used in applications requiring high current switching such as power supplies and motor control due to its robust design and high voltage capabilities.

Median Price

$1.039

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 546 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

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546

$0.770

$0.580

$0.500

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Freelance Electronics

USA . 55 parts In-Stock

1+ parts

$1.309

100+ parts

$1.374

1k+ parts

$1.296

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55

$1.309

$1.374

$1.296

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Vyrian

USA . 2,116 parts In-Stock

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Digiode

USA . 2,078 parts In-Stock

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2,078

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Semi Source

USA . 129 parts In-Stock

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129

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Electronic Expediters

USA . 22 parts In-Stock

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LittleDiode

UK . 15 parts In-Stock

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Resion

USA . 6 parts In-Stock

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Standard Data Resources

USA . 4 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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MISTER SPROCKETS

USA . 2 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$3.339

100+ parts

$3.038

1k+ parts

$2.738

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50

$3.339

$3.038

$2.738

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Corohmni

South Africa . 249 parts In-Stock

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$4.744

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249

$4.744

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Native Components

USA . 680 parts In-Stock

1+ parts

$2,537.200

100+ parts

$2,486.456

1k+ parts

$2,461.084

10k+ parts

$2,435.712

680

$2,537.200

$2,486.456

$2,461.084

$2,435.712

Northwest PG Solutions

USA . 1,198 parts In-Stock

1+ parts

$2,790.920

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$2,790.920

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TANS Electronics

Latvia . 6,125 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,119 parts In-Stock

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SupplyDigital Components

Austria . 5,592 parts In-Stock

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Kulean Microsystems

USA . 5,518 parts In-Stock

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Problanco Electronics

Mexico . 1,382 parts In-Stock

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Corphita

USA . 1,217 parts In-Stock

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UHIMA Technologies

Türkiye . 810 parts In-Stock

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810

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Perfect Parts

USA . 2 parts In-Stock

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Overview

Unleash the power of the Onsemi 2N6399 Silicon Controlled Rectifier! Engineered by a trusted manufacturer, this SCR offers unmatched quality and reliability. With a maximum DC Gate Trigger Current of 30 mA and a Non Repetitive Peak On-state Current of 100 A, this product is perfect for a variety of applications. From industrial machinery to consumer electronics, the 2N6399 delivers exceptional performance and efficiency. Experience the value and benefits of this versatile component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliability and durability.

Maximum DC Gate Trigger Current: 30 mA

Allows for precise control of the SCR, making it suitable for a variety of applications.

Configuration: SINGLE

Simplified design and installation process, making it easier to integrate into electronic circuits.

Non Repetitive Peak On-state Current: 100 A

Capable of handling high current loads, making it ideal for power electronics.

Package Shape: RECTANGULAR

Optimal shape for easy mounting and heat dissipation, enhancing overall performance.

Terminal Form: THROUGH-HOLE

Ensures secure connections with the circuit board, reducing the risk of connectivity issues.

Maximum On-state Current: 5 A

Sufficient current rating for medium-power applications, balancing performance and efficiency.

Maximum Leakage Current: 2 mA

Low leakage current minimizes power loss and improves energy efficiency.

Repetitive Peak Reverse Voltage: 800 V

High reverse voltage rating provides protection against voltage spikes and surges.

No. of Terminals: 3

Simple terminal configuration for easy connection in a circuit.

Package Style (Meter): FLANGE MOUNT

Convenient mounting style for secure installation in various electronic devices.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for use in different environments without compromising performance.

Trigger Device Type: SCR

SCR is a reliable and commonly used semiconductor device for controlling current, ensuring stability and accuracy.

Minimum Operating Temperature: -40 °C

Capable of operating in harsh cold conditions, expanding the range of applications.

Terminal Finish: TIN LEAD

Provides corrosion resistance and good solderability for secure electrical connections.

Terminal Position: SINGLE

Simplified terminal layout for easier circuit design and installation.

Maximum RMS On-state Current: 12 A

High RMS current rating for efficient and reliable performance under continuous load conditions.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures precise and reliable switching of the SCR.

Case Connection: ANODE

Specific case connection for easy identification and installation in the circuit.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating for better insulation and protection against voltage transients.

Maximum Holding Current: 60 mA

Able to maintain conduction without external trigger signal, ensuring stability in the circuit.

Peak Reflow Temperature °C: 235

Capability to withstand high reflow temperature during manufacturing processes, ensuring product reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6399 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N6399 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5840-01-144-5436, 5840011445436, 5961-01-418-6803, 5961014186803

NIIN

011445436, 014186803

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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