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2N6397

Onsemi

2N6397 by Onsemi

2N6397 by Onsemi is a SCR with 30mA DC Gate Trigger Current, 100A Non Repetitive Peak On-state Current, and 5A Max On-state Current. It is used in applications requiring high current switching such as power supplies and motor control due to its robust design and wide operating temperature range from -40°C to 125°C.

Median Price

$0.870

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 3 parts In-Stock

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$0.870

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$0.870

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American Microsemiconductor Inc.

USA . 5,888 parts In-Stock

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$4.330

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$4.330

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Digital Electronic Gebert Verwaltungs UG

Germany . 9,500 parts In-Stock

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9,500

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Digiode

USA . 662 parts In-Stock

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662

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Electro Mavin

USA . 405 parts In-Stock

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405

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Vyrian

USA . 349 parts In-Stock

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349

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Electronic Expediters

USA . 182 parts In-Stock

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182

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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100

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Bristol Electronics

USA . 100 parts In-Stock

1+ parts

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100+ parts

$0.633

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100

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$0.633

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Dan-Mar Components

USA . 100 parts In-Stock

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100

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Inland Empire Components Inc.

USA . 60 parts In-Stock

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60

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Extreme Components

USA . 55 parts In-Stock

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55

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Resion

USA . 17 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Microfarads

USA . 7 parts In-Stock

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ZD Integrated Circuits Inc.

USA . 5 parts In-Stock

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Sunrise Surplus Inc.

USA . 3 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 214 parts In-Stock

1+ parts

$0.870

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214

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TANS Electronics

Latvia . 6,801 parts In-Stock

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6,801

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Kepictronics

USA . 4,800 parts In-Stock

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4,800

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SupplyDigital Components

Austria . 3,397 parts In-Stock

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3,397

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Kulean Microsystems

USA . 1,922 parts In-Stock

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1,922

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UHIMA Technologies

Türkiye . 440 parts In-Stock

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440

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Problanco Electronics

Mexico . 130 parts In-Stock

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130

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Corphita

USA . 122 parts In-Stock

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A-Plus Industry Inc.

USA . 100 parts In-Stock

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100

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Assy Fe

Spain . 88 parts In-Stock

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88

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Overview

Enhance your electronic projects with the high-quality 2N6397 Silicon Controlled Rectifier by Onsemi. This SCR offers exceptional performance and reliability, making it a top choice for various applications. From power supplies to motor control, this versatile device provides great value and benefits to customers seeking efficiency and durability. Trust the expertise of Onsemi and take your projects to the next level with the 2N6397.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection, making the product durable and reliable.

Maximum DC Gate Trigger Current: 30 mA

Allows for precise triggering of the device, ensuring smooth operation.

Configuration: SINGLE

Simplifies the setup and usage of the product.

Non Repetitive Peak On-state Current: 100 A

Capable of handling high current loads efficiently.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in various applications.

Terminal Form: THROUGH-HOLE

Provides secure and stable connections to the circuit board.

Maximum On-state Current: 5 A

Suitable for medium current applications.

Maximum Leakage Current: 2 mA

Ensures minimal power loss when the device is in the off-state.

Repetitive Peak Reverse Voltage: 400 V

Suitable for applications requiring high reverse voltage protection.

No. of Terminals: 3

Provides necessary connections for proper functionality.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting and secure attachment in various equipment.

Maximum Operating Temperature: 125 °C

Can operate efficiently in high-temperature environments.

Trigger Device Type: SCR

Utilizes Silicon Controlled Rectifiers for reliable switching and control.

Minimum Operating Temperature: -40 °C

Capable of functioning in low-temperature conditions.

Terminal Finish: TIN LEAD

Provides corrosion resistance and ensures proper conductivity.

Terminal Position: SINGLE

Simplifies the connection setup and maintenance.

Maximum RMS On-state Current: 12 A

Suitable for applications requiring medium to high current handling capability.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage for efficient control and operation.

Case Connection: ANODE

Clear indication of the connection point for proper circuit configuration.

Repetitive Peak Off-state Voltage: 400 V

Ensures reliable off-state voltage protection for the device.

Maximum Holding Current: 60 mA

Required holding current for stable operation of the device.

Peak Reflow Temperature °C: 235

Can withstand higher temperatures during reflow soldering processes.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6397 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N6397 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-25-125-7349, 5961251257349, 5961-21-906-8490, 5961219068490, 6115-01-148-8714, 6115011488714

NIIN

251257349, 219068490, 011488714

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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