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BT151-500R

NXP Semiconductors

BT151-500R by NXP Semiconductors

The NXP Semiconductors BT151-500R is a single SCR with a max on-state current of 7.5A and repetitive peak reverse voltage of 500V. It is used in applications requiring high power control such as industrial motor drives, lighting controls, and heating equipment.

Median Price

$0.378

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

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Tomark Electronics Ltd

UK . 47 parts In-Stock

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$0.220

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Nova Conductors

Japan . 870 parts In-Stock

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Freelance Electronics

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TME

Poland . 234 parts In-Stock

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Rapid Electronics

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France . 3,713 parts In-Stock

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ABC Electronics Ltd.

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Micros

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ComSIT Distribution GmbH

Germany . 349 parts In-Stock

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ComSIT USA

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Vyrian

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Tech-Mark Corp

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Cogito LLC

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Bristol Electronics

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SOS electronic

Slovakia . 25 parts In-Stock

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Pegasus Components GmbH

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Whistler Technology

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Holdelec - ElecDif-Pro

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LittleDiode

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Bastille Electronics

Australia . 50 parts In-Stock

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$0.253

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$0.240

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$0.237

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Continental Prestige Electronics

USA . 4,875 parts In-Stock

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$0.261

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Argo Parts USA

USA . 102 parts In-Stock

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Aztec Data Supply Inc.

USA . 9,571 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 313 parts In-Stock

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Perfect Parts

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UNI Independent Distributors

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Alle Elektronik GmbH

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Cyclops Electronics Ltd (Excess)

UK . 194 parts In-Stock

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GreenTree Electronics

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Overview

Unlock the power of efficient energy management with the BT151-500R by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors delivers top-quality Silicon Controlled Rectifiers that guarantee reliability and performance. Ideal for a wide range of applications, this SCR offers customers the value of enhanced control and protection for their electronic devices. Experience the benefits of seamless operation and optimal efficiency with the BT151-500R - the perfect choice for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the SCR, making it durable and reliable for long-term use.

Maximum DC Gate Trigger Current: 15 mA

This low trigger current ensures efficient and reliable switching of the SCR.

Configuration: SINGLE

Simplified design with single configuration for ease of installation and operation.

Repetitive Peak On-state Current: 132 A

Allows the SCR to handle high current loads efficiently without overheating.

Terminal Form: THROUGH-HOLE

Provides secure and reliable connection to the circuit board.

Maximum On-state Current: 7.5 A

Can handle moderate current loads, suitable for various applications.

Maximum Leakage Current: 0.5 mA

Low leakage current ensures minimal power loss and increased efficiency.

Repetitive Peak Reverse Voltage: 500 V

Can handle high reverse voltages, suitable for different applications.

Maximum Repetitive Peak Off-state Leakage Current: 500 uA

Low off-state leakage current ensures minimal power loss and better performance.

No. of Terminals: 3

Simple design with 3 terminals for easy connection in the circuit.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the SCR to function in different environments.

Trigger Device Type: SCR

SCR technology provides reliable and efficient switching for various applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low trigger voltage ensures efficient and reliable switching of the SCR.

Repetitive Peak Off-state Voltage: 500 V

Can handle high off-state voltages, suitable for diverse applications.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Fast rate of rise of off-state voltage allows for quick switching and response in the circuit.

Maximum Holding Current: 20 mA

Holding current ensures the SCR remains in the on-state, providing stability in the circuit.

Nominal Circuit Commutated Turn-off Time: 70 us

Fast turn-off time ensures quick response and switching in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BT151-500R attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

20 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

Non Repetitive Peak On-state Current:

132 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

7.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Maximum Repetitive Peak Off-state Leakage Current:

500 uA

Repetitive Peak Off-state Voltage:

500 V

Repetitive Peak Reverse Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BT151-500R Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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