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TI145A4

Texas Instruments

TI145A4 by Texas Instruments

TI145A4 by Texas Instruments is a single SCR with max DC gate trigger current of 25mA and non-repetitive peak on-state current of 30A. It has a package style of cylindrical metal body, suitable for applications requiring high voltage control like power supplies and motor drives.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,338 parts In-Stock

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5,338

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Electronic Expediters

USA . 287 parts In-Stock

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287

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Digiode

USA . 93 parts In-Stock

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93

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,750 parts In-Stock

1+ parts

$1.970

100+ parts

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$2.503

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1,750

$1.970

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$2.503

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DigiPath Technology Company

USA . 1,738 parts In-Stock

1+ parts

$2.170

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$1.996

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1,738

$2.170

$1.996

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ChromeModa Solutions

Germany . 2,405 parts In-Stock

1+ parts

$2.214

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$1.815

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2,405

$2.214

$1.815

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IDEA Electronic Components Group

UK . 2,325 parts In-Stock

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$2.214

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$1.993

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2,325

$2.214

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$1.993

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One Stop Electronics

USA . 1,265 parts In-Stock

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$3.100

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1,265

$3.100

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AZTECH Wire

Italy . 861 parts In-Stock

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$16.860

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861

$16.860

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Corphita

USA . 4,800 parts In-Stock

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4,800

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Overview

Enhance your electronic projects with the high-quality TI145A4 Silicon Controlled Rectifier by Texas Instruments. This SCR offers reliable performance and durability, thanks to its metal package body material and single configuration. With a maximum on-state current of 1.6 A and a repetitive peak reverse voltage of 400 V, this versatile component is perfect for a wide range of applications. Whether you're working on power supplies or motor control systems, the TI145A4 provides excellent value, efficiency, and precision. Upgrade your designs today with Texas Instruments' trusted technology.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides better heat dissipation, ensuring the SCR operates efficiently and reliably even at high temperatures.

Maximum DC Gate Trigger Current: 25 mA

Having a maximum gate trigger current of 25 mA allows for precise control over the switching of the SCR, resulting in improved performance and reliability.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the SCR easier to integrate into various applications.

Non Repetitive Peak On-state Current: 30 A

With a non-repetitive peak on-state current of 30 A, this SCR can handle high current surges, making it suitable for demanding applications.

Package Shape: ROUND

The round package shape offers better mechanical strength and easier mounting, ensuring a stable connection in the circuit.

Terminal Form: WIRE

The wire terminal form simplifies the connection process and provides a secure and reliable electrical connection.

Maximum On-state Current: 1.6 A

The maximum on-state current of 1.6 A makes this SCR suitable for medium-power applications where controlled switching is required.

Maximum Leakage Current: 0.25 mA

The low maximum leakage current of 0.25 mA ensures minimal power loss and improves the efficiency of the SCR.

Repetitive Peak Reverse Voltage: 400 V

The repetitive peak reverse voltage of 400 V allows the SCR to withstand reverse voltage spikes, enhancing its reliability in the circuit.

No. of Terminals: 3

The 3 terminals provide flexibility in circuit connections and enable the SCR to be easily integrated into various circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and efficient use of space, making it suitable for applications where space is limited.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100°C, this SCR can reliably operate in high-temperature environments without degradation in performance.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over the switching process, making it ideal for applications where controlled power conversion is needed.

Minimum Operating Temperature: -60 °C

The minimum operating temperature of -60°C ensures that the SCR can also operate in extremely cold environments without any issues.

Terminal Position: BOTTOM

The bottom terminal position simplifies the installation process and allows for easy connection in various circuit setups.

Maximum RMS On-state Current: 1.6 A

The maximum RMS on-state current of 1.6 A indicates the continuous current-carrying capacity of the SCR, making it suitable for steady-state applications.

Maximum DC Gate Trigger Voltage: 3.5 V

A low maximum gate trigger voltage of 3.5 V ensures efficient and reliable triggering of the SCR, especially in low-voltage applications.

Case Connection: ANODE

The case connection at the anode offers better heat dissipation and electrical isolation, improving the overall performance and reliability of the SCR.

Repetitive Peak Off-state Voltage: 400 V

The repetitive peak off-state voltage of 400 V allows the SCR to block high voltages, ensuring the safety and reliability of the circuit.

Maximum Holding Current: 25 mA

The maximum holding current of 25 mA ensures the SCR remains in the on-state even after the gate trigger signal is removed, providing stability in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TI145A4 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Holding Current:

25 mA

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.25 mA

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

1.6 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TI145A4 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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