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TI145A1

Texas Instruments

TI145A1 by Texas Instruments

TI145A1 by Texas Instruments is a single SCR with max. DC gate trigger current of 25mA and non-repetitive peak on-state current of 30A. It has a package shape of round, suitable for applications requiring a max on-state current of 1.6A, such as power control circuits in industrial equipment.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,830 parts In-Stock

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5,830

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Digiode

USA . 2,945 parts In-Stock

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2,945

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Mil-Aero Solutions, Inc.

USA . 245 parts In-Stock

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245

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,082 parts In-Stock

1+ parts

$3.426

100+ parts

-

1k+ parts

$3.951

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1,082

$3.426

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$3.951

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DigiPath Technology Company

USA . 1,807 parts In-Stock

1+ parts

$3.773

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1,807

$3.773

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ChromeModa Solutions

Germany . 6,856 parts In-Stock

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$3.850

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$3.157

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6,856

$3.850

$3.157

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IDEA Electronic Components Group

UK . 1,026 parts In-Stock

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$3.850

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$3.465

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1,026

$3.850

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$3.465

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AZTECH Wire

Italy . 237 parts In-Stock

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$7.670

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237

$7.670

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One Stop Electronics

USA . 199 parts In-Stock

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$24.100

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199

$24.100

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Corphita

USA . 3,097 parts In-Stock

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3,097

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Overview

Enhance your electronic projects with the TI145A1 by Texas Instruments, a high-quality Silicon Controlled Rectifier designed for reliability and efficiency. Manufactured by the trusted brand Texas Instruments, this SCR offers a maximum on-state current of 1.6 A and a non-repetitive peak on-state current of 30 A, making it ideal for various applications. From power supplies to motor control, the TI145A1 provides exceptional performance and durability. Experience the value and benefits that this product brings to your projects, with its superior quality and advanced technology.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides durability and reliable performance in various operating conditions.

Maximum DC Gate Trigger Current: 25 mA

The low gate trigger current allows for efficient control and operation of the SCR.

Configuration: SINGLE

Single configuration simplifies the setup and integration of the SCR in different electronic circuits.

Non Repetitive Peak On-state Current: 30 A

High peak on-state current capability enables the SCR to handle heavy loads and high power applications.

Package Shape: ROUND

The round package shape facilitates easy mounting and handling of the SCR in various electronic systems.

Terminal Form: WIRE

Wire terminals ensure secure connections and ease of installation of the SCR in circuits.

Maximum On-state Current: 1.6 A

The high maximum on-state current rating allows the SCR to handle moderate power loads efficiently.

Maximum Leakage Current: 0.25 mA

Low leakage current ensures minimal power loss and enhances the overall performance of the SCR.

Repetitive Peak Reverse Voltage: 100 V

The high repetitive peak reverse voltage rating makes the SCR suitable for applications requiring voltage blocking capability.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and control functions of the SCR.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compactness and efficient heat dissipation for the SCR.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows the SCR to operate reliably in elevated temperature environments.

Trigger Device Type: SCR

Being an SCR, this device offers precise and reliable switching control for various electronic applications.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature ensures the SCR can function effectively in cold environments.

Terminal Position: BOTTOM

Bottom terminal position enables easier mounting and connection of the SCR in circuits or systems.

Maximum RMS On-state Current: 1.6 A

The maximum RMS on-state current rating ensures efficient and reliable performance of the SCR under varying load conditions.

Maximum DC Gate Trigger Voltage: 3.5 V

Low gate trigger voltage requirement allows for easy and precise triggering of the SCR.

Case Connection: ANODE

Anode case connection simplifies the circuit layout and enhances the overall performance and reliability of the SCR.

Repetitive Peak Off-state Voltage: 100 V

The repetitive peak off-state voltage rating ensures the SCR can block high voltages in various applications.

Maximum Holding Current: 25 mA

High holding current capability ensures stable operation and retention of on-state status for the SCR.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TI145A1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Holding Current:

25 mA

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.25 mA

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

1.6 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TI145A1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-888-0472, 5961008880472

NIIN

008880472

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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