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BTW68-1200N

STMicroelectronics

BTW68-1200N by STMicroelectronics

BTW68-1200N by STMicroelectronics is a robust SCR designed for high-performance applications. It features a max repetitive peak reverse voltage of 1200 V, non-repetitive peak on-state current of 420 A, and operates b/w -45 °C to 125°C. Ideal for power control in industrial systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,603 parts In-Stock

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2,603

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Digiode

USA . 1,825 parts In-Stock

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1,825

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Vyrian

USA . 63 parts In-Stock

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63

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Distributors (Availability)

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Native Components

USA . 21 parts In-Stock

1+ parts

$0.646

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21

$0.646

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Northwest PG Solutions

USA . 876 parts In-Stock

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$0.710

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876

$0.710

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IDEA Electronic Components Group

UK . 1,656 parts In-Stock

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$1.975

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$1.778

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1,656

$1.975

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$1.778

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MKK Technologies

India . 2,002 parts In-Stock

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$3.714

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2,002

$3.714

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DigiPath Technology Company

USA . 2,002 parts In-Stock

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$3.714

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2,002

$3.714

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Corphita

USA . 1,866 parts In-Stock

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Parana Technologies

USA . 1,034 parts In-Stock

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$2.362

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1,034

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$2.362

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Overview

Experience unmatched reliability and efficiency with the BTW68-1200N from STMicroelectronics, a leader in semiconductor innovation. This high-performance silicon controlled rectifier is ideal for demanding applications, offering robust current handling and exceptional thermal stability. Its durable design ensures long-lasting operation across various environments, making it perfect for industrial controls, power management, and energy conversion. Choose STMicroelectronics for quality you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material ensures reliability and longevity in various environmental conditions.

Maximum DC Gate Trigger Current: 50 mA

A higher gate trigger current allows for more flexible control in circuit design.

Configuration: SINGLE

Single configuration simplifies design and reduces the complexity of circuit integration.

Non Repetitive Peak On-state Current: 420 A

This high current rating enables it to handle significant power loads, making it suitable for demanding applications.

Package Shape: RECTANGULAR

Rectangular shape aids in efficient layout and heat dissipation in circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminals contribute to robust mechanical strength and are easy to mount on PCBs.

Maximum On-state Current: 25 A

Ideal for circuit applications that require steady performance under load.

Maximum Leakage Current: 3 mA

Low leakage current enhances efficiency and minimizes power loss, making it more energy-efficient.

Repetitive Peak Reverse Voltage: 1200 V

High voltage rating allows it to operate safely in high-voltage applications, ensuring durability.

No. of Terminals: 3

Three terminals make it versatile for various circuit configurations and designs.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides easy installation and reliability in fixed applications.

Maximum Operating Temperature: 125 °C

This high operating temperature rating allows for use in harsh environments without failure.

Trigger Device Type: SCR

SCR type devices are known for effective switching and control in high power applications.

Minimum Operating Temperature: -45 °C

Wide temperature range ensures operation in extreme conditions, enhancing reliable performance.

Terminal Position: SINGLE

Single terminal position aids in straightforward circuit design and integration.

Maximum RMS On-state Current: 35 A

Greater RMS current handling ensures that the product can sustain continuous loads without overheating.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage enables compatibility with a wide range of control circuits, simplifying integration.

Case Connection: ISOLATED

Isolated case connection contributes to safety and reduces the risk of unintended circuit interactions.

Repetitive Peak Off-state Voltage: 1200 V

High off-state voltage rating ensures the product can withstand considerable reverse voltage without failure.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/µs

A high rate of rise enhances switching speed, making it ideal for high-frequency applications.

Maximum Holding Current: 75 mA

This ensures reliable turn-off characteristics, enhancing stability in operation.

Nominal Circuit Commutated Turn-off Time: 100 µs

Rapid turn-off time allows for efficient operation in fast-switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BTW68-1200N attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

75 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

420 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

35 A

Repetitive Peak Off-state Voltage:

1200 V

Repetitive Peak Reverse Voltage:

1200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BTW68-1200N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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