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BTW68-1200

STMicroelectronics

BTW68-1200 by STMicroelectronics

BTW68-1200 by STMicroelectronics is a robust SCR designed for high-voltage applications, featuring a repetitive peak reverse voltage of 1200 V and a max on-state current of 25 A. It operates efficiently in temperatures from -40 °C to 125°C. Ideal for power control in industrial systems, it ensures reliable performance with minimal leakage.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,005 parts In-Stock

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2,005

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Digiode

USA . 1,567 parts In-Stock

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1,567

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ComSIT Distribution GmbH

Germany . 270 parts In-Stock

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270

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ComSIT USA

USA . 270 parts In-Stock

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270

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Vyrian

USA . 190 parts In-Stock

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190

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ABC Electronics Ltd.

UK . 100 parts In-Stock

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100

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Halfin

Belgium . 41 parts In-Stock

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41

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LittleDiode

UK . 28 parts In-Stock

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28

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ACDS - Activité Composants Distribution Service

France . 14 parts In-Stock

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14

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ECAB

Sweden . 12 parts In-Stock

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12

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Distributors (Availability)

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Native Components

USA . 493 parts In-Stock

1+ parts

$0.339

100+ parts

-

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$0.325

493

$0.339

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$0.325

Northwest PG Solutions

USA . 2,181 parts In-Stock

1+ parts

$0.373

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$0.329

2,181

$0.373

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$0.329

IDEA Electronic Components Group

UK . 1,815 parts In-Stock

1+ parts

$1.878

100+ parts

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$1.690

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1,815

$1.878

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$1.690

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MKK Technologies

India . 691 parts In-Stock

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$3.531

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691

$3.531

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DigiPath Technology Company

USA . 691 parts In-Stock

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$3.531

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691

$3.531

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Corphita

USA . 3,628 parts In-Stock

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Parana Technologies

USA . 1,771 parts In-Stock

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$2.245

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$2.245

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Assy Fe

Spain . 1 parts In-Stock

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Overview

Experience unmatched performance with the BTW68-1200 from STMicroelectronics, a leader in semiconductor innovation. Designed for reliability and efficiency in demanding applications, this Silicon Controlled Rectifier (SCR) excels in power switching and control. Benefit from its robust construction and superior thermal performance, ensuring longevity and stability even under extreme conditions. Trust in ST's commitment to quality, empowering your projects with dependable solutions that enhance operational excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides a lightweight and durable casing that ensures reliability and protection against environmental factors.

Maximum DC Gate Trigger Current: 50 mA

A maximum gate trigger current of 50 mA allows for efficient control of the SCR, making it suitable for various applications.

Configuration: SINGLE

Having a single configuration simplifies integration into circuits, promoting ease of use and reducing complexity in design.

Non Repetitive Peak On-state Current: 420 A

The high non-repetitive peak on-state current capability allows this SCR to handle large current loads, increasing its suitability for demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient space utilization in applications, allowing for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust mechanical support and ease of soldering, enhancing the reliability of the connection.

Maximum On-state Current: 25 A

A maximum on-state current of 25 A ensures efficient operation under standard conditions, making it ideal for a range of power control applications.

Maximum Leakage Current: 3 mA

Low leakage current contributes to reduced power loss and increased efficiency, making this SCR suitable for energy-conscious designs.

Repetitive Peak Reverse Voltage: 1200 V

With a high repetitive peak reverse voltage of 1200 V, this SCR can withstand significant voltage spikes, adding to its durability.

Maximum Repetitive Peak Off-state Leakage Current: 20 uA

Minimal off-state leakage current enhances the performance in power applications, improving energy efficiency in circuits.

No. of Terminals: 3

The three-terminal design allows for more versatile connectivity options, facilitating easier integration into existing circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount style offers effective heat dissipation and sturdiness, helping to ensure reliable operation under varying conditions.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this SCR can function effectively in high-temperature environments, expanding its range of applications.

Trigger Device Type: SCR

As an SCR, this device is well-suited for high-power applications, providing both control and rectification capabilities.

Minimum Operating Temperature: -40 °C

An operational range down to -40 °C makes this SCR ideal for use in extreme environments, ensuring consistent performance.

Terminal Finish: TIN LEAD

The tin-lead finish ensures excellent solderability and reduces corrosion risk, enhancing the longevity of the connections.

Terminal Position: SINGLE

The single terminal position simplifies installation in many configurations, making it user-friendly in various applications.

Maximum RMS On-state Current: 30 A

A maximum RMS on-state current of 30 A enables this SCR to efficiently manage higher loads, increasing its application versatility.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage of 1.5 V allows for easy interfacing with low-voltage control systems, enhancing compatibility.

Case Connection: ISOLATED

An isolated case connection helps prevent accidental short circuits and enhances safety in electronic designs.

Repetitive Peak Off-state Voltage: 1200 V

High repetitive peak off-state voltage capabilities enable robust application in high-voltage environments, ensuring reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 250 V/us

The ability to handle a minimum critical rate of rise of off-state voltage allows for quick voltage transitions, beneficial in switching applications.

Maximum Holding Current: 75 mA

A holding current of 75 mA provides flexibility in circuit design, ensuring reliable turn-off characteristics for sensitive applications.

Nominal Circuit Commutated Turn-off Time: 100 us

A fast turn-off time of 100 µs enables improved performance in dynamic applications, enhancing overall circuit response.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies compliance with safety standards, ensuring that this SCR is a trustworthy choice for critical applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BTW68-1200 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

250 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

75 mA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

420 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

30 A

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Off-state Leakage Current:

20 uA

Repetitive Peak Off-state Voltage:

1200 V

Repetitive Peak Reverse Voltage:

1200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BTW68-1200 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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