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BTW66-400

STMicroelectronics

BTW66-400 by STMicroelectronics

BTW66-400 by STMicroelectronics is a robust SCR with a max repetitive peak voltage of 400 V and non-repetitive peak on-state current of 200 A. It features a metal package for durability and operates efficiently from -40 °C to 125°C. Ideal for power control applications, it ensures reliable performance in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Digiode

USA . 4,503 parts In-Stock

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Anansix

USA . 2,438 parts In-Stock

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Vyrian

USA . 207 parts In-Stock

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Lantek

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ACDS - Activité Composants Distribution Service

France . 25 parts In-Stock

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ECAB

Sweden . 9 parts In-Stock

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Pegasus Components GmbH

Germany . 5 parts In-Stock

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Native Components

USA . 185 parts In-Stock

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$2.025

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Northwest PG Solutions

USA . 868 parts In-Stock

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$2.228

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IDEA Electronic Components Group

UK . 1,793 parts In-Stock

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$2.523

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$2.270

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MKK Technologies

India . 642 parts In-Stock

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$4.744

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DigiPath Technology Company

USA . 642 parts In-Stock

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$4.744

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Corphita

USA . 4,079 parts In-Stock

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Parana Technologies

USA . 952 parts In-Stock

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GreenTree Electronics

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Overview

Elevate your projects with the BTW66-400 from STMicroelectronics, a top-tier Silicon Controlled Rectifier (SCR) that combines unmatched reliability with exceptional performance. Renowned for their commitment to quality, STMicroelectronics ensures this robust component excels in applications like motor control, power switching, and lighting regulation. With its resilient design and efficient operation, the BTW66-400 delivers lasting value, empowering you to innovate confidently and effectively.

Feature Benefit Bullets

Package Body Material: METAL

The metal body material provides enhanced durability and heat dissipation, ensuring consistent performance under demanding conditions.

Maximum DC Gate Trigger Current: 50 mA

A relatively low gate trigger current allows for reduced power consumption while still providing reliable triggering.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier to implement in various applications.

Non Repetitive Peak On-state Current: 200 A

The high non-repetitive peak on-state current capability allows the device to handle surge loads effectively, making it suitable for large power applications.

Package Shape: ROUND

The round package shape facilitates easy mounting and integration into various designs, providing versatility for engineers.

Terminal Form: SOLDER LUG

Solder lug terminals ensure reliable and robust connections, enhancing the overall stability of the device in circuit applications.

Maximum On-state Current: 20 A

With a maximum on-state current of 20 A, this SCR is capable of handling substantial loads in practical applications.

Quick Connects Description: A-G-K

The quick connect feature simplifies installation and maintenance, improving overall efficiency in system design.

Maximum Leakage Current: 3 mA

Low maximum leakage current ensures energy efficiency and minimizes power losses in the circuit.

Repetitive Peak Reverse Voltage: 400 V

The high repetitive peak reverse voltage rating makes this SCR ideal for use in high voltage applications, providing reliability and safety.

Maximum Repetitive Peak Off-state Leakage Current: 20 uA

Extremely low off-state leakage current enhances performance and is crucial for maintaining efficiency in power electronics.

No. of Terminals: 3

The three-terminal design provides flexibility in connections, simplifying circuit layout and reducing complexity.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure attachment to heatsinks or enclosures, promoting effective thermal management.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C ensures that the SCR can operate reliably in demanding environments without derating.

Trigger Device Type: SCR

As a SCR, this device offers efficient control of power within circuits, making it ideal for switching and rectification applications.

Minimum Operating Temperature: -40 °C

The wide operating temperature range (-40 °C to 125°C) makes this SCR suitable for a variety of operating conditions, enhancing its application scope.

Terminal Position: UPPER

The upper terminal position facilitates easier access and better layout in circuit designs, improving overall usability.

Maximum RMS On-state Current: 30 A

With a maximum RMS on-state current of 30 A, this SCR can efficiently handle significant power levels in applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage of 1.5 V reduces the risk of triggering issues while conserving energy in control circuits.

Case Connection: ISOLATED

An isolated case connection enhances safety and minimizes interference with other circuit components, providing reliable operation.

Repetitive Peak Off-state Voltage: 400 V

High repetitive peak off-state voltage makes this SCR suitable for high-voltage applications while maintaining safety and efficiency.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

The high critical rate of rise of off-state voltage allows for quicker turn-off characteristics, improving overall switching performance.

Maximum Holding Current: 75 mA

A maximum holding current of 75 mA ensures that the SCR can maintain a stable operation under varying load conditions.

Nominal Circuit Commutated Turn-off Time: 100 us

The fast turn-off time of 100 microseconds enhances switching efficiency, making it suitable for high-speed applications.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies compliance with safety standards, ensuring reliability and consumer trust in the product's quality.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BTW66-400 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Quick Connects Description:

A-G-K

Screw Terminals Description:

0

Maximum Holding Current:

75 mA

JESD-30 Code:

O-MUFM-D3

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

200 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

20 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

30 A

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Off-state Leakage Current:

20 uA

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BTW66-400 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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