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BTW67-200

STMicroelectronics

BTW67-200 by STMicroelectronics

BTW67-200 by STMicroelectronics is a robust SCR designed for high-performance applications. It features a max DC gate trigger current of 80 mA, non-repetitive peak on-state current of 350 A, and operates within -40 °C to 125°C. Ideal for power control in industrial systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,289 parts In-Stock

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Anansix

USA . 673 parts In-Stock

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673

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Digiode

USA . 122 parts In-Stock

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Electronics Depot

USA . 18 parts In-Stock

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Native Components

USA . 222 parts In-Stock

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$0.181

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$0.174

222

$0.181

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$0.174

Northwest PG Solutions

USA . 854 parts In-Stock

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$0.199

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$0.176

854

$0.199

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$0.176

IDEA Electronic Components Group

UK . 1,877 parts In-Stock

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$2.373

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$2.135

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$3.101

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$2.822

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$2.543

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500

$3.101

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$2.543

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Corohmni

South Africa . 70 parts In-Stock

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$4.282

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MKK Technologies

India . 1,487 parts In-Stock

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$4.462

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DigiPath Technology Company

USA . 1,487 parts In-Stock

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$4.462

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AZTECH Wire

Italy . 926 parts In-Stock

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$18.190

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Corphita

USA . 3,778 parts In-Stock

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Parana Technologies

USA . 1,749 parts In-Stock

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$2.837

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Overview

Elevate your projects with the BTW67-200 from STMicroelectronics, a standout in Silicon Controlled Rectifiers. Renowned for its exceptional quality, STMicroelectronics ensures reliability and performance, making this SCR ideal for a variety of applications—from motor control to power switching. Experience benefits like efficient energy management and robust design, empowering you to tackle demanding tasks while enhancing system longevity. Discover unmatched value with the trusted leader in semiconductor technology!

Feature Benefit Bullets

Package Body Material: METAL

The metal package provides durability and enhances thermal conductivity, making it suitable for high-performance applications.

Maximum DC Gate Trigger Current: 80 mA

The relatively high gate trigger current allows for efficient switching, ensuring reliable operation in demanding environments.

Configuration: SINGLE

The single configuration simplifies circuit design, making the product ideal for less complex applications.

Non Repetitive Peak On-state Current: 350 A

This high peak on-state current rating ensures the device can handle large currents without damage, suitable for heavy-duty applications.

Package Shape: ROUND

The round shape optimizes space efficiency in mounting, allowing for more compact designs.

Terminal Form: SOLDER LUG

Solder lug terminals provide robust connections, ensuring reliability in electrical performance and ease of installation.

Maximum On-state Current: 25 A

With a maximum on-state current of 25 A, the product is ideal for various thermal and electrical load applications.

Quick Connects Description: A-G-K

The quick connect feature simplifies integration with existing circuits, enhancing usability.

Maximum Leakage Current: 6 mA

A low maximum leakage current ensures minimal power loss, improving overall circuit efficiency.

Repetitive Peak Reverse Voltage: 200 V

This voltage rating provides safety against voltage spikes, making the product reliable even in adverse conditions.

Maximum Repetitive Peak Off-state Leakage Current: 20 uA

The low off-state leakage current helps in maintaining circuit integrity and reducing operational costs.

No. of Terminals: 3

The 3-terminal design allows for versatile connections and configurations in circuit design.

Package Style (Meter): FLANGE MOUNT

Flange mount design ensures secure and stable installation, improving mechanical performance.

Maximum Operating Temperature: 125 °C

The high operating temperature range makes this SCR suitable for high-temperature applications.

Trigger Device Type: SCR

As an SCR, it is optimized for controlled rectification, ideal for applications needing precise power control.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures ensures reliability in extreme environments.

Terminal Position: UPPER

Upper terminal position simplifies mounting and access in various configurations.

Maximum RMS On-state Current: 40 A

A maximum RMS on-state current of 40 A signifies robust performance under continuous load conditions.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage requirement enhances usability with less stringent driving circuit conditions.

Case Connection: ISOLATED

Isolated case connections enhance safety by preventing electrical contact with the outer casing.

Repetitive Peak Off-state Voltage: 200 V

This high voltage rating protects against breakdown voltage in various operational scenarios.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

The specification allows for rapid voltage changes, beneficial for fast switching applications.

Maximum Holding Current: 150 mA

The maximum holding current rating helps prevent accidental tripping, ensuring stable operation.

Nominal Circuit Commutated Turn-off Time: 100 us

Fast turn-off time enhances application efficiency, supporting high-frequency switching operations.

Reference Standard: UL RECOGNIZED

Being UL recognized provides assurance of safety and compliance with industry standards, enhancing market trust.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BTW67-200 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

80 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Quick Connects Description:

A-G-K

Screw Terminals Description:

0

Maximum Holding Current:

150 mA

JESD-30 Code:

O-MUFM-D3

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

350 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

40 A

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Off-state Leakage Current:

20 uA

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BTW67-200 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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