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BTW68-1000N

STMicroelectronics

BTW68-1000N by STMicroelectronics

BTW68-1000N by STMicroelectronics is a robust SCR designed for high-power applications. It features a max on-state current of 16 A, non-repetitive peak on-state current of 420 A, and operates within -45 °C to 125°C. Ideal for controlling large loads in industrial settings.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,691 parts In-Stock

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3,691

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Digiode

USA . 3,308 parts In-Stock

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3,308

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Anansix

USA . 2,694 parts In-Stock

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2,694

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ECAB

Sweden . 209 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 43 parts In-Stock

1+ parts

$0.404

100+ parts

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$0.388

43

$0.404

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$0.388

Northwest PG Solutions

USA . 1,985 parts In-Stock

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$0.445

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$0.392

1,985

$0.445

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$0.392

IDEA Electronic Components Group

UK . 1,522 parts In-Stock

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$3.700

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$3.330

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1,522

$3.700

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$3.330

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MKK Technologies

India . 1,714 parts In-Stock

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$6.958

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$6.958

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DigiPath Technology Company

USA . 1,714 parts In-Stock

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$6.958

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$6.958

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Corphita

USA . 2,759 parts In-Stock

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2,759

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Parana Technologies

USA . 1,381 parts In-Stock

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$4.424

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$4.424

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Assy Fe

Spain . 2 parts In-Stock

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Overview

Unlock unparalleled performance with the BTW68-1000N by STMicroelectronics, your go-to silicon controlled rectifier (SCR) for reliable power management. Renowned for their innovation and quality, STMicroelectronics delivers exceptional durability and efficiency, making this SCR ideal for industrial automation, motor control, and power conversion applications. Experience enhanced operational stability and longevity, ensuring your projects thrive while minimizing downtime and maintenance costs. Choose BTW68-1000N—where excellence meets reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy package ensures protection against environmental factors and enhances long-term reliability.

Maximum DC Gate Trigger Current: 50 mA

A higher gate trigger current allows for better control and more efficient operation in various applications.

Configuration: SINGLE

Single configuration makes it easier to integrate into simple circuits, minimizing complexity.

Non Repetitive Peak On-state Current: 420 A

The high peak on-state current capability means it can handle brief surges without damage, ideal for demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are suitable for high-stress applications.

Maximum On-state Current: 16 A

Suitable for a wide range of applications, this on-state current rating ensures operational reliability.

Maximum Leakage Current: 3 mA

Low leakage current contributes to energy efficiency and reduces wasted energy, enhancing the overall performance.

Repetitive Peak Reverse Voltage: 1000 V

High voltage rating allows the SCR to be used in high-power and high-voltage applications safely.

No. of Terminals: 3

Three terminals provide flexibility in circuit design, making it easier to integrate into various configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount design ensures secure mounting in applications, improving stability and thermal performance.

Maximum Operating Temperature: 125 °C

Able to operate at high temperatures, this SCR is suitable for harsh environments and robust applications.

Trigger Device Type: SCR

As a silicon controlled rectifier, it offers precise control over electrical flows, making it ideal for various control applications.

Minimum Operating Temperature: -45 °C

The ability to function in extremely low temperatures broadens its usability across diverse environments.

Terminal Position: SINGLE

A single terminal position enhances ease of integration into circuit designs while maintaining performance.

Maximum RMS On-state Current: 35 A

A high RMS on-state current rating guarantees operational efficiency in continuous duty applications.

Maximum DC Gate Trigger Voltage: 3 V

Low gate voltage requirement allows for easy interfacing with low-voltage control circuits.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents potential electrical interference with other components.

Repetitive Peak Off-state Voltage: 1000 V

This high off-state voltage rating adds to the versatility of the SCR in high-power applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/μs

A high rate of rise ensures fast switching and enhances the overall performance in dynamic applications.

Maximum Holding Current: 75 mA

The holding current limit allows for effective control of the SCR in various applications while ensuring stability.

Nominal Circuit Commutated Turn-off Time: 100 μs

Fast turn-off time facilitates efficient switching in circuits, making it suitable for high-speed applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BTW68-1000N attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

75 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

420 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

35 A

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BTW68-1000N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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