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2N6407

Onsemi

2N6407 by Onsemi

The Onsemi 2N6407 is a Silicon Controlled Rectifier with max DC gate trigger current of 75mA, on-state current of 16A, and off-state voltage of 400V. It is used in power control applications due to its high peak on-state current capability and low leakage current.

Median Price

$12.000

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Bristol Electronics

USA . 97 parts In-Stock

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$12.000

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$7.200

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Vyrian

USA . 1,897 parts In-Stock

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Digiode

USA . 1,377 parts In-Stock

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Connector Distribution Corp

USA . 463 parts In-Stock

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Right Parts Inc.

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Microfarads

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Resion

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Native Components

USA . 208 parts In-Stock

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Northwest PG Solutions

USA . 494 parts In-Stock

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$1.293

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SupplyDigital Components

Austria . 7,905 parts In-Stock

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Kulean Microsystems

USA . 7,442 parts In-Stock

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TANS Electronics

Latvia . 6,960 parts In-Stock

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Problanco Electronics

Mexico . 3,714 parts In-Stock

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Corphita

USA . 766 parts In-Stock

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UHIMA Technologies

Türkiye . 327 parts In-Stock

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Corohmni

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Overview

Unlock the power of innovation with the 2N6407 Silicon Controlled Rectifier from Onsemi. Known for their high-quality components, Onsemi delivers reliable solutions for a wide range of applications. Whether you're working on motor control, lighting systems, or power supplies, the 2N6407 offers unmatched performance and efficiency. With a maximum on-state current of 16A and non-repetitive peak on-state current of 250A, this SCR provides the durability and reliability you need. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the 2N6407 today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

Having a high maximum DC gate trigger current allows for reliable and consistent triggering of the SCR, ensuring smooth operation.

Non Repetitive Peak On-state Current: 250 A

With a high non-repetitive peak on-state current, this SCR can handle sudden surges in current without damaging the device, making it suitable for high-demand applications.

Maximum On-state Current: 16 A

A maximum on-state current of 16 A allows this SCR to reliably handle moderate levels of current, making it versatile for a range of applications.

Maximum Leakage Current: 2 mA

Low maximum leakage current ensures minimal power loss and efficient operation of the SCR, making it energy-efficient.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SCR can withstand elevated temperatures, making it suitable for industrial environments.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this device offers precise control over current flow, making it ideal for applications requiring accurate power management.

Repetitive Peak Off-state Voltage: 400 V

A high repetitive peak off-state voltage allows this SCR to handle higher voltage levels, ensuring reliable performance in applications with varying voltage requirements.

Maximum Holding Current: 80 mA

The maximum holding current of 80 mA ensures that the SCR remains in the on-state without false triggering, enhancing the stability and reliability of the device.

Nominal Circuit Commutated Turn-off Time: 35 us

With a fast nominal circuit commutated turn-off time, this SCR can quickly switch off in response to control signals, enabling precise control over power output.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6407 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

35 us

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

80 mA

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

SCR

Trade Compliance

2N6407 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-086-0076, 5961010860076

NIIN

010860076

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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