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2N6405TG

Onsemi

2N6405TG by Onsemi

2N6405TG by Onsemi is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 75mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 16A. It operates b/w -40 to 125 °C and is used in power control applications requiring high current handling capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 2,318 parts In-Stock

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Digiode

USA . 1,402 parts In-Stock

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Native Components

USA . 222 parts In-Stock

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SupplyDigital Components

Austria . 6,200 parts In-Stock

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TANS Electronics

Latvia . 3,697 parts In-Stock

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Kulean Microsystems

USA . 3,421 parts In-Stock

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Problanco Electronics

Mexico . 3,354 parts In-Stock

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Northwest PG Solutions

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Corphita

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Corohmni

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Overview

Unlock the potential of your electronic devices with the reliable 2N6405TG by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their Silicon Controlled Rectifiers (SCR). The 2N6405TG boasts a maximum DC Gate Trigger Current of 75 mA and a Non Repetitive Peak On-state Current of 250 A, making it perfect for a wide range of applications. Trust in Onsemi to deliver superior products that provide value, efficiency, and reliability to meet all your electronic needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

Low gate trigger current requirement helps in efficient and reliable triggering of the SCR, making it suitable for a variety of applications.

Non Repetitive Peak On-state Current: 250 A

High peak on-state current capability allows the SCR to handle large current surges, making it suitable for high power applications.

Maximum On-state Current: 16 A

With a maximum on-state current of 16 A, this SCR can handle moderate current loads effectively.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss in the off-state, improving overall efficiency of the device.

Maximum Operating Temperature: 125 °C

High operating temperature limit allows the SCR to be used in demanding environments without thermally overstressing the device.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over the switching of AC power to DC, making it suitable for various power control applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures reliable operation in both extreme cold and hot conditions, enhancing the device's versatility.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability of the device in various applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage allows for easy and efficient control of the SCR, while minimizing power losses in the triggering circuit.

Repetitive Peak Off-state Voltage: 100 V

Repetitive peak off-state voltage rating of 100 V makes this SCR suitable for low voltage applications where reliable switching capability is required.

Maximum Holding Current: 80 mA

High holding current capability ensures the SCR remains ON even when the gate pulse is removed, providing stability in applications where continuous conduction is required.

Nominal Circuit Commutated Turn-off Time: 35 us

Fast commutation time of 35 microseconds allows the SCR to quickly switch off when required, improving overall efficiency and reducing switching losses.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6405TG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

35 us

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

80 mA

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

SCR

Trade Compliance

2N6405TG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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