Loading...

2N6405T

Onsemi

2N6405T by Onsemi

2N6405T by Onsemi is a Silicon Controlled Rectifier with max on-state voltage of 1.8V, DC gate trigger current of 75mA, and on-state current of 16A. It is used in applications requiring high current switching such as motor control, lighting, and power supplies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,293

-

-

-

-

Digiode

USA . 2,164 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,164

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 4,977 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,977

-

-

-

-

Problanco Electronics

Mexico . 3,573 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,573

-

-

-

-

Kulean Microsystems

USA . 2,365 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,365

-

-

-

-

Northwest PG Solutions

USA . 2,048 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.038

10k+ parts

-

2,048

-

-

$4.038

-

SupplyDigital Components

Austria . 1,341 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,341

-

-

-

-

UHIMA Technologies

Türkiye . 602 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

602

-

-

-

-

Corphita

USA . 278 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

278

-

-

-

-

Corohmni

South Africa . 193 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

193

-

-

-

-

Native Components

USA . 101 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.996

10k+ parts

-

101

-

-

$3.996

-

Overview

Unlock the power of reliable performance with the Onsemi 2N6405T Silicon Controlled Rectifier. Manufactured by industry leader Onsemi, this SCR offers superior quality and precision engineering. Ideal for a wide range of applications, this product provides customers with unmatched value, benefits, and advantages. Trust in Onsemi for cutting-edge technology that delivers exceptional results every time.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low on-state voltage helps in reducing power loss and improving efficiency of the product.

Maximum DC Gate Trigger Current: 75 mA

The low DC gate trigger current allows for efficient control of the SCR, making it suitable for various applications.

Non Repetitive Peak On-state Current: 250 A

High non repetitive peak on-state current capability allows the SCR to handle high surge currents efficiently.

Maximum On-state Current: 16 A

The high on-state current rating enables the SCR to handle high current loads effectively.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, improving overall efficiency.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes the SCR suitable for use in various environments.

Trigger Device Type: SCR

SCR technology provides reliable and efficient switching performance in various applications.

Repetitive Peak Off-state Voltage: 100 V

The high repetitive peak off-state voltage rating allows the SCR to withstand voltage spikes and transients.

Maximum Holding Current: 80 mA

High holding current ensures the SCR remains in the on-state even when the control signal is removed.

Nominal Circuit Commutated Turn-off Time: 35 us

Fast turn-off time enables quick switching and efficient control of the SCR in various applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6405T attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

35 us

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

80 mA

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Voltage:

1.8 V

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

SCR

Trade Compliance

2N6405T Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20