Loading...

2N6407G

Onsemi

2N6407G by Onsemi

2N6407G by Onsemi is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 75mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 16A. It operates b/w -40 to 125 °C and is ideal for applications requiring high current switching such as motor control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,024 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,024

-

-

-

-

Vyrian

USA . 628 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

628

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 665 parts In-Stock

1+ parts

$1.150

100+ parts

-

1k+ parts

-

10k+ parts

-

665

$1.150

-

-

-

Northwest PG Solutions

USA . 2,190 parts In-Stock

1+ parts

$1.265

100+ parts

-

1k+ parts

-

10k+ parts

-

2,190

$1.265

-

-

-

SupplyDigital Components

Austria . 7,531 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,531

-

-

-

-

Problanco Electronics

Mexico . 6,212 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,212

-

-

-

-

Kulean Microsystems

USA . 2,093 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,093

-

-

-

-

Corphita

USA . 1,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,860

-

-

-

-

UHIMA Technologies

Türkiye . 885 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

885

-

-

-

-

TANS Electronics

Latvia . 777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

777

-

-

-

-

Corohmni

South Africa . 99 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

99

-

-

-

-

Overview

Unleash the power of the 2N6407G Silicon Controlled Rectifier by Onsemi! With a reputation for excellence in semiconductor manufacturing, Onsemi delivers a top-of-the-line product that guarantees reliability and performance. Perfect for a wide range of applications, this SCR offers customers unparalleled value and benefits. Whether you need a component for industrial machinery or home electronics, the 2N6407G provides the quality and efficiency you deserve. Upgrade your devices today with Onsemi's cutting-edge technology!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

Low gate trigger current allows for efficient and precise control of the SCR, ensuring reliable operation.

Non Repetitive Peak On-state Current: 250 A

High peak on-state current capability makes this SCR suitable for applications requiring high power handling capacities.

Maximum On-state Current: 16 A

With a maximum on-state current of 16 A, this SCR can handle moderate to high current loads effectively.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power losses and improving efficiency of the SCR in various applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in harsh environmental conditions.

Trigger Device Type: SCR

Being an SCR, this device offers excellent switching characteristics and robust performance in diverse applications.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating makes this SCR suitable for controlling high voltage circuits with ease and reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6407G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

35 us

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

80 mA

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

SCR

Trade Compliance

2N6407G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19