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2N6403TG

Onsemi

2N6403TG by Onsemi

SCR; Surface Mount: NO; Minimum Operating Temperature: -40 Cel; Repetitive Peak Off-state Voltage: 400 V; JESD-609 Code: e3; Non Repetitive Peak On-state Current: 160 A;

Median Price

$0.850

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 220 parts In-Stock

1+ parts

$2.570

100+ parts

$1.190

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$1.130

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220

$2.570

$1.190

$1.130

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Rochester

USA . 700 parts In-Stock

1+ parts

-

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$0.753

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$0.625

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$0.557

700

-

$0.753

$0.625

$0.557

DigiKey

USA . 700 parts In-Stock

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$0.940

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700

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$0.940

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Verical

USA . 700 parts In-Stock

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$0.847

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700

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$0.847

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Arrow

USA . 369 parts In-Stock

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$0.763

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369

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Chip1Stop

Japan . 367 parts In-Stock

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$0.853

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367

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$0.853

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Distributors (In-Stock)

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Digiode

USA . 866 parts In-Stock

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$0.587

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$0.587

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Vyrian

USA . 1,496 parts In-Stock

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$0.618

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$0.618

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Rapid Electronics

USA . 2,150 parts In-Stock

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Ashlea Components Ltd

UK . 189 parts In-Stock

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Distributors (Availability)

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Northwest PG Solutions

USA . 1,348 parts In-Stock

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$0.235

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$0.207

1,348

$0.235

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$0.207

Corphita

USA . 2,426 parts In-Stock

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$0.556

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2,426

$0.556

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Corohmni

South Africa . 463 parts In-Stock

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$0.618

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463

$0.618

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,534 parts In-Stock

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SupplyDigital Components

Austria . 6,641 parts In-Stock

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Kulean Microsystems

USA . 4,999 parts In-Stock

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Problanco Electronics

Mexico . 3,210 parts In-Stock

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Native Components

USA . 888 parts In-Stock

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Continental Prestige Electronics

USA . 700 parts In-Stock

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$0.527

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700

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$0.527

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TANS Electronics

Latvia . 493 parts In-Stock

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493

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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Perfect Parts

USA . 137 parts In-Stock

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Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6403TG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

35 us

Maximum DC Gate Trigger Current:

60 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

60 mA

JESD-609 Code:

e3

Non Repetitive Peak On-state Current:

160 A

Maximum On-state Current:

10 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

260

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Trigger Device Type:

SCR

Trade Compliance

2N6403TG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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