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2N6407T

Onsemi

2N6407T by Onsemi

The Onsemi 2N6407T is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 75mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 16A. It operates b/w -40 to 125 °C and has a Repetitive Peak Off-state Voltage of 400V. Ideal for power control applications requiring high current handling capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,393 parts In-Stock

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Vyrian

USA . 378 parts In-Stock

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Native Components

USA . 555 parts In-Stock

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Northwest PG Solutions

USA . 402 parts In-Stock

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$0.280

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TANS Electronics

Latvia . 7,748 parts In-Stock

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Problanco Electronics

Mexico . 6,001 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,348 parts In-Stock

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Kulean Microsystems

USA . 1,266 parts In-Stock

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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Overview

Elevate your electronic projects with the 2N6407T by Onsemi, a top-of-the-line Silicon Controlled Rectifier designed to deliver unmatched performance and reliability. Crafted by renowned manufacturer Onsemi, this SCR boasts a maximum DC Gate Trigger Current of 75 mA and a Non Repetitive Peak On-state Current of 250 A, making it ideal for a variety of applications. Whether you're looking to enhance your industrial equipment or upgrade your home electronics, the 2N6407T offers exceptional value, efficiency, and durability that will exceed your expectations. Experience the difference with Onsemi's cutting-edge technology in the palm of your hands.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

Low gate trigger current allows for easy and efficient control of the SCR, making it ideal for applications requiring precise triggering.

Non Repetitive Peak On-state Current: 250 A

High peak on-state current capability ensures the SCR can handle heavy loads and sudden surge currents without any issues.

Maximum On-state Current: 16 A

The maximum on-state current of 16A is suitable for a wide range of applications, making this SCR versatile and adaptable for various scenarios.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss and enhances the efficiency of the SCR when it is not conducting.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for the SCR to withstand harsh environmental conditions, making it durable and reliable in different settings.

Trigger Device Type: SCR

Being an SCR, this device offers precise control over switching and conduction, making it a preferred choice for applications that require stable and predictable performance.

Terminal Finish: TIN LEAD

The TIN LEAD terminal finish provides good solderability and ensures a reliable electrical connection, adding to the longevity and performance of the SCR.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage requirement simplifies the control circuit design and reduces the power consumption needed for triggering the SCR.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating allows the SCR to withstand voltage surges and spikes, making it suitable for applications with fluctuating voltage levels.

Maximum Holding Current: 80 mA

The high holding current ensures the SCR remains in the on-state even after the triggering signal is removed, providing stability and reliability in continuous conduction applications.

Nominal Circuit Commutated Turn-off Time: 35 us

Fast turn-off time enhances the efficiency and speed of the SCR in switching off, making it suitable for high-frequency switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6407T attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

35 us

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

80 mA

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

SCR

Trade Compliance

2N6407T Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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