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OMAP3503DCUSA

Texas Instruments

OMAP3503DCUSA by Texas Instruments

OMAP3503DCUSA by Texas Instruments is a 423-terminal IC with max supply voltage of 1.91V and operating temp up to 105°C. Ideal for industrial applications, it features a system-on-chip design, CMOS technology, and low-profile grid array package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,773 parts In-Stock

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Vyrian

USA . 3,758 parts In-Stock

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3,758

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Distributors (Availability)

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AZTECH Wire

Italy . 685 parts In-Stock

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$13.765

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685

$13.765

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One Stop Electronics

USA . 766 parts In-Stock

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$27.000

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766

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Parana Technologies

USA . 2,052 parts In-Stock

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$41.101

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2,052

$41.101

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DigiPath Technology Company

USA . 33 parts In-Stock

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$45.257

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33

$45.257

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ChromeModa Solutions

Germany . 5,240 parts In-Stock

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$46.181

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$37.868

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$46.181

$37.868

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IDEA Electronic Components Group

UK . 649 parts In-Stock

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$46.181

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$43.872

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$41.563

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649

$46.181

$43.872

$41.563

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Corohmni

South Africa . 2,147 parts In-Stock

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$86.076

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Component Stockers USA

USA . 660 parts In-Stock

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$99.990

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660

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Corphita

USA . 1,205 parts In-Stock

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Microchip USA

USA . 283 parts In-Stock

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Kepictronics

USA . 68 parts In-Stock

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Overview

Experience the cutting-edge technology of Texas Instruments with the OMAP3503DCUSA, a versatile System on Chip solution perfect for a variety of applications. With a focus on quality and innovation, Texas Instruments delivers a product that exceeds expectations in performance and reliability. Whether you're looking to enhance your smart devices, automotive systems, or industrial equipment, this product offers unmatched value, benefits, and advantages to meet your unique needs. Upgrade to the OMAP3503DCUSA and discover the endless possibilities it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and helps in protecting the internal components of the product.

Surface Mount: YES

The surface mount feature allows for easy and efficient integration of the product onto a circuit board, saving space and simplifying the manufacturing process.

Maximum Supply Voltage: 1.91 V

The high maximum supply voltage allows for reliable operation even under challenging conditions, making this product suitable for a wide range of applications.

Package Shape: SQUARE

The square package shape helps in uniform distribution of components within the package, optimizing space utilization and ensuring efficient functioning of the product.

Minimum Operating Temperature: -40 °C

The ability to operate at a minimum temperature of -40 °C ensures that the product is suitable for use in harsh environments or extreme climatic conditions.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature of 105 °C indicates that the product can withstand elevated temperatures without compromising its performance, making it reliable for industrial use.

Nominal Supply Voltage: 1.8 V

The nominal supply voltage of 1.8 V ensures stable and consistent power delivery to the product, contributing to its overall reliability and performance.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, making it an energy-efficient and reliable choice for various electronic applications.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs OMAP3503DCUSA attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B423

JESD-609 Code:

e1

Length:

16 mm

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

423

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA423,24X24,25

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.1,1.2,1.8,1.8/3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Sub-Category:

Graphics Processors

Maximum Supply Voltage:

1.91 V

Minimum Supply Voltage:

1.71 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Trade Compliance

OMAP3503DCUSA Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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