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OMAP3503DCBCA

Texas Instruments

OMAP3503DCBCA by Texas Instruments

SYSTEM ON CHIP; Temperature Grade: INDUSTRIAL; Terminal Form: BALL; No. of Terminals: 515; Package Code: VFBGA; Package Shape: SQUARE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,670 parts In-Stock

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6,670

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Digiode

USA . 3,886 parts In-Stock

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3,886

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 239 parts In-Stock

1+ parts

$5.000

100+ parts

-

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239

$5.000

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Ampacity Inc.

Singapore . 502 parts In-Stock

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$10.000

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502

$10.000

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AZTECH Wire

Italy . 711 parts In-Stock

1+ parts

$11.585

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711

$11.585

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Corohmni

South Africa . 4,926 parts In-Stock

1+ parts

$39.295

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4,926

$39.295

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Parana Technologies

USA . 2,126 parts In-Stock

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$65.505

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2,126

$65.505

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DigiPath Technology Company

USA . 1,570 parts In-Stock

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$72.129

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1,570

$72.129

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IDEA Electronic Components Group

UK . 1,868 parts In-Stock

1+ parts

$73.601

100+ parts

$69.921

1k+ parts

$66.241

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1,868

$73.601

$69.921

$66.241

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ChromeModa Solutions

Germany . 1,646 parts In-Stock

1+ parts

$73.601

100+ parts

$60.353

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1,646

$73.601

$60.353

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Component Stockers USA

USA . 309 parts In-Stock

1+ parts

$99.990

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309

$99.990

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Corphita

USA . 3,725 parts In-Stock

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3,725

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Microchip USA

USA . 106 parts In-Stock

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106

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Technical Specifications

Other Function uPs,uCs & Peripheral ICs OMAP3503DCBCA attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B515

JESD-609 Code:

e1

Length:

12 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

515

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA515,26X26,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.1,1.8,3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Graphics Processors

Maximum Supply Voltage:

1.91 V

Minimum Supply Voltage:

1.71 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

12 mm

Peripheral IC Type:

Trade Compliance

OMAP3503DCBCA Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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