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OMAP3503DCBBA

Texas Instruments

OMAP3503DCBBA by Texas Instruments

OMAP3503DCBBA by Texas Instruments is a SYSTEM ON CHIP with 515 terminals in a GRID ARRAY package. It operates b/w -40 to 105 °C with supply voltage ranging from 1.71V to 1.91V, making it ideal for industrial applications requiring high performance and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,445 parts In-Stock

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4,445

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Digiode

USA . 1,490 parts In-Stock

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1,490

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 454 parts In-Stock

1+ parts

$18.419

100+ parts

-

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454

$18.419

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One Stop Electronics

USA . 1,172 parts In-Stock

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$20.000

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1,172

$20.000

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Corohmni

South Africa . 95 parts In-Stock

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$22.366

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95

$22.366

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Parana Technologies

USA . 1,049 parts In-Stock

1+ parts

$23.509

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$24.141

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1,049

$23.509

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$24.141

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DigiPath Technology Company

USA . 1,682 parts In-Stock

1+ parts

$25.887

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1,682

$25.887

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ChromeModa Solutions

Germany . 2,176 parts In-Stock

1+ parts

$26.415

100+ parts

$21.660

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2,176

$26.415

$21.660

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IDEA Electronic Components Group

UK . 330 parts In-Stock

1+ parts

$26.415

100+ parts

$25.094

1k+ parts

$23.774

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330

$26.415

$25.094

$23.774

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Corphita

USA . 1,440 parts In-Stock

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1,440

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Microchip USA

USA . 189 parts In-Stock

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189

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Overview

Unleash the power of innovation with the OMAP3503DCBBA by Texas Instruments. This cutting-edge System on Chip offers unrivaled performance and reliability, setting new standards in the industry. Designed with precision and expertise, this product is ideal for a wide range of applications, providing seamless integration and efficiency. Elevate your projects with the exceptional quality and advanced technology of the OMAP3503DCBBA, where value meets excellence. Experience the difference today and revolutionize the way you work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is commonly used for electronic components as it provides good protection against moisture and electrical insulation.

Surface Mount: YES

Surface mount technology allows for smaller and more compact designs, making the product suitable for space-constrained applications.

Maximum Supply Voltage: 1.91 V

The maximum supply voltage of 1.91 V ensures safe operation and protects the product from overvoltage damage.

Minimum Supply Voltage: 1.71 V

The minimum supply voltage of 1.71 V ensures reliable performance and operation within specified voltage range.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105°C, the product can withstand elevated temperature environments without performance degradation.

Minimum Operating Temperature: -40 °C

The product's minimum operating temperature of -40°C ensures reliable operation even in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

The terminal finish of Tin Silver Copper provides good conductivity and corrosion resistance, ensuring long-term reliability of the product.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Nominal Supply Voltage: 1.8 V

The nominal supply voltage of 1.8 V is a common voltage level, making the product compatible with a wide range of applications.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs OMAP3503DCBBA attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B515

JESD-609 Code:

e1

Length:

12 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

515

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA515,28X28,16

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Power Supplies (V):

1.1,1.2,1.8,1.8/3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Graphics Processors

Maximum Supply Voltage:

1.91 V

Minimum Supply Voltage:

1.71 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Width:

12 mm

Peripheral IC Type:

Trade Compliance

OMAP3503DCBBA Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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