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CC1310F32RGZT

Texas Instruments

CC1310F32RGZT by Texas Instruments

CC1310F32RGZT by Texas Instruments is a Cortex-M3 CPU with 28672 RAM bytes. It operates at -40 to 85 °C, with a supply voltage range of 1.8V to 3.8V. Ideal for industrial applications requiring a MICROPROCESSOR CIRCUIT in a compact, surface-mountable package style.

Median Price

$4.882

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 12 parts In-Stock

1+ parts

$0.035

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12

$0.035

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Verical

USA . 12 parts In-Stock

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$3.630

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12

$3.630

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Texas Instruments

USA . 450 parts In-Stock

1+ parts

$6.135

100+ parts

$5.375

1k+ parts

$3.037

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-

450

$6.135

$5.375

$3.037

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DigiKey

USA . 107 parts In-Stock

1+ parts

$7.060

100+ parts

$5.341

1k+ parts

$4.776

10k+ parts

$4.566

107

$7.060

$5.341

$4.776

$4.566

Chip1Stop

Japan . 12 parts In-Stock

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12

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Digiode

USA . 247 parts In-Stock

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$0.033

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247

$0.033

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Nova Conductors

Japan . 27 parts In-Stock

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$4.377

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27

$4.377

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Vyrian

USA . 5,303 parts In-Stock

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5,303

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Distributors (Availability)

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Semicontronic

India . 119 parts In-Stock

1+ parts

$0.030

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$0.029

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$0.029

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119

$0.030

$0.029

$0.029

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Ampacity Inc.

Singapore . 7 parts In-Stock

1+ parts

$0.030

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7

$0.030

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Corphita

USA . 2,398 parts In-Stock

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$0.032

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2,398

$0.032

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$4.289

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$4.118

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100

$4.289

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$4.118

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Continental Prestige Electronics

USA . 4,956 parts In-Stock

1+ parts

$4.377

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$4.289

4,956

$4.377

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$4.289

Argo Parts USA

USA . 3,127 parts In-Stock

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$4.377

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$4.377

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AZTECH Wire

Italy . 302 parts In-Stock

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$17.952

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$17.952

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Modulus Dynamics

Lithuania . 10 parts In-Stock

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$20.594

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$20.594

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$20.594

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10

$20.594

$20.594

$20.594

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Corohmni

South Africa . 208 parts In-Stock

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$24.189

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208

$24.189

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Parana Technologies

USA . 807 parts In-Stock

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$39.856

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807

$39.856

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ChromeModa Solutions

Germany . 5,971 parts In-Stock

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$44.782

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$36.721

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5,971

$44.782

$36.721

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IDEA Electronic Components Group

UK . 2,223 parts In-Stock

1+ parts

$44.782

100+ parts

$42.543

1k+ parts

$40.304

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2,223

$44.782

$42.543

$40.304

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DigiPath Technology Company

USA . 2,091 parts In-Stock

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$40.375

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2,091

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$40.375

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Overview

Enhance your electronic designs with the CC1310F32RGZT by Texas Instruments, a top-quality microprocessor circuit that offers unmatched performance and reliability. Manufactured with precision and expertise, this versatile chip carrier is perfect for a wide range of applications, from IoT devices to industrial controls. With a nominal supply voltage of 3.3V and a maximum operating temperature of 85°C, the CC1310F32RGZT ensures optimal functionality in any environment. Experience the benefits of state-of-the-art technology and innovation with this cutting-edge product, designed to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the IC, making it suitable for various applications.

Surface Mount: YES

Allows for easy and reliable installation on PCBs, saving time and effort during assembly.

Maximum Supply Voltage: 3.8 V

Allows for flexibility in power supply options and operation within a safe voltage range.

Package Shape: SQUARE

Square shape helps optimize space usage on the PCB, especially in compact designs.

No. of Terminals: 48

Sufficient number of terminals for connecting the IC to external components and peripherals.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Versatile package styles provide options for different mounting and cooling configurations.

Minimum Supply Voltage: 1.8 V

Allows for operation at lower power levels, aiding in energy efficiency.

Maximum Operating Temperature: 85 °C

Wide operating temperature range suitable for industrial applications and harsh environments.

CPU Family: CORTEX-M3

Utilizes a proven and efficient CPU architecture for reliable performance.

Minimum Operating Temperature: -40 °C

Can operate in extremely low temperatures, ideal for applications in cold environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: QUAD

Quad terminal position facilitates soldering and ensures secure placement on the PCB.

Maximum Seated Height: 1mm

Low profile design helps in fitting the IC in space-constrained applications.

Width: 7mm

Compact width facilitates PCB layout and integration in various system designs.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes without damage.

Length: 7mm

Compact length for space-efficient PCB integration.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial temperature conditions for reliable operation.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Incorporates microprocessor functionality for processing data and controlling peripherals.

RAM Bytes: 28672

Ample RAM capacity for data storage and processing requirements in various applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient operation.

Terminal Form: NO LEAD

Lead-free terminal form compliant with environmental regulations and safer for handling.

Nominal Supply Voltage: 3.3 V

Standard supply voltage suitable for many electronic systems and peripherals.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for compact and high-density PCB designs.

Moisture Sensitivity Level (MSL): 3

MSL 3 rating indicates the IC can endure moderate exposure to moisture during storage and assembly.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs CC1310F32RGZT attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

CPU Family:

CORTEX-M3

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

RAM Bytes:

28672

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

3.8 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Peripheral IC Type:

Trade Compliance

CC1310F32RGZT Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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