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DRA782BDGABFRQ1

Texas Instruments

DRA782BDGABFRQ1 by Texas Instruments

DRA782BDGABFRQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 367 terminals in a GRID ARRAY package. It operates at up to 32 MHz, compatible with CAN, I2C, SPI, and UART buses. Ideal for automotive applications due to AEC-Q100 screening and wide temperature range from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,362 parts In-Stock

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3,362

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Digiode

USA . 2,796 parts In-Stock

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2,796

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Distributors (Availability)

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AZTECH Wire

Italy . 887 parts In-Stock

1+ parts

$16.492

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887

$16.492

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One Stop Electronics

USA . 1,122 parts In-Stock

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$30.000

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$30.000

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Corohmni

South Africa . 177 parts In-Stock

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$62.198

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177

$62.198

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Parana Technologies

USA . 316 parts In-Stock

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$76.073

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316

$76.073

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DigiPath Technology Company

USA . 1,839 parts In-Stock

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$83.766

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1,839

$83.766

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ChromeModa Solutions

Germany . 4,981 parts In-Stock

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$85.475

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$70.090

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4,981

$85.475

$70.090

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IDEA Electronic Components Group

UK . 577 parts In-Stock

1+ parts

$85.475

100+ parts

$81.201

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$76.928

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577

$85.475

$81.201

$76.928

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Microchip USA

USA . 3,650 parts In-Stock

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3,650

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Northwest PG Solutions

USA . 1,897 parts In-Stock

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$4.029

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$4.029

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Infinite Electronics LLP (Excess)

. 1,680 parts In-Stock

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1,680

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Corphita

USA . 1,510 parts In-Stock

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Native Components

USA . 489 parts In-Stock

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$3.988

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489

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$3.988

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Overview

Discover the DRA782BDGABFRQ1 by Texas Instruments, a cutting-edge peripheral IC designed for automotive applications. With a high-quality plastic/epoxy package body and advanced CMOS technology, this microprocessor circuit offers unparalleled reliability and performance. Featuring a wide range of bus compatibility including CAN, I2C, SPI, and UART, this product is perfect for a variety of automotive systems. Trust Texas Instruments to deliver top-tier solutions that exceed expectations in the most demanding environments. Elevate your automotive projects with the DRA782BDGABFRQ1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for automotive applications where weight and reliability are important factors.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and cost in production.

Maximum Supply Voltage: 1.11 V

With a high maximum supply voltage, this product can handle a wide range of power input, providing versatility in different applications.

Screening Level: AEC-Q100

This screening level ensures that the product meets the stringent automotive quality standards, making it reliable for use in automotive electronics.

Package Shape: SQUARE

The square package shape allows for efficient use of space on the PCB, optimizing layout and design of the electronic system.

No. of Terminals: 367

Having a high number of terminals provides flexibility in connecting the product to other components in the system, enabling complex functionalities.

Package Style (Meter): GRID ARRAY

The grid array package style facilitates high-density mounting and soldering, enhancing performance and reliability of the product.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures makes the product suitable for automotive environments where temperature variations are common.

Maximum Seated Height: 2.82 mm

The low seated height allows for a compact design, saving space on the PCB and enabling installation in tight spaces.

External Data Bus Width: 48

With a wide data bus width, the product can process and transmit large amounts of data quickly and efficiently, enhancing overall system performance.

Maximum Clock Frequency: 32 MHz

The high clock frequency allows for fast processing speeds, enabling the product to perform tasks swiftly and reliably.

Temperature Grade: AUTOMOTIVE

Being automotive-grade means the product is designed and tested to withstand the harsh conditions of automotive environments, ensuring durability and reliability.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

The use of a microprocessor circuit enhances the product's processing capabilities, enabling it to perform advanced functions and complex operations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy electrical environments.

Nominal Supply Voltage: 1.06 V

Having a stable nominal supply voltage ensures consistent and reliable performance of the product under varying operating conditions.

Bus Compatibility: CAN; I2C; SPI; UART

The compatibility with multiple bus protocols allows the product to communicate with a variety of devices and systems, enabling versatile connectivity.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA782BDGABFRQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; SPI; UART

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

48

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA782BDGABFRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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