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DRA780BDGABFRQ1

Texas Instruments

DRA780BDGABFRQ1 by Texas Instruments

DRA780BDGABFRQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 367 terminals in a GRID ARRAY package. It operates at -40 to 125 °C, with a max clock frequency of 32 MHz. Ideal for automotive applications, supporting CAN, I2C, SPI, and UART bus compatibility.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,276 parts In-Stock

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Digiode

USA . 2,440 parts In-Stock

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One Stop Electronics

USA . 209 parts In-Stock

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$16.000

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$16.000

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AZTECH Wire

Italy . 209 parts In-Stock

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$16.125

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Corohmni

South Africa . 5,184 parts In-Stock

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$49.329

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Parana Technologies

USA . 530 parts In-Stock

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$68.304

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530

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IDEA Electronic Components Group

UK . 603 parts In-Stock

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$76.746

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$72.909

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$69.071

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603

$76.746

$72.909

$69.071

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ChromeModa Solutions

Germany . 499 parts In-Stock

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$76.746

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$62.932

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$76.746

$62.932

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Northwest PG Solutions

USA . 2,080 parts In-Stock

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$3.910

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Microchip USA

USA . 1,693 parts In-Stock

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Corphita

USA . 1,127 parts In-Stock

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Native Components

USA . 254 parts In-Stock

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$3.870

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DigiPath Technology Company

USA . 252 parts In-Stock

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$69.194

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Overview

Elevate your automotive electronics with the DRA780BDGABFRQ1 by Texas Instruments. This cutting-edge microprocessor circuit offers unmatched reliability and performance in a compact grid array package. Ideal for CAN, I2C, SPI, and UART bus compatibility, this device is designed to optimize efficiency and precision in a wide range of applications. Experience seamless operation and advanced functionality with Texas Instruments' innovative technology, setting new standards for automotive electronics. Drive your projects forward with the DRA780BDGABFRQ1 and discover the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly on circuit boards, saving time and cost in production.

Maximum Supply Voltage: 1.11 V

Provides a safe operating range for the device, preventing damage from overvoltage situations.

Screening Level: AEC-Q100

This automotive electronic council standard ensures high reliability and quality, making it suitable for automotive applications.

Package Shape: SQUARE

Square shape allows for efficient use of space on the circuit board, maximizing component density.

No. of Terminals: 367

High number of terminals allow for versatile connectivity options, enabling complex circuit designs.

Minimum Operating Temperature: -40 °C

Wide operating temperature range makes the product suitable for use in extreme environmental conditions.

Terminal Finish: TIN SILVER COPPER

This finish provides good conductivity and corrosion resistance, ensuring reliable connections.

Width: 15 mm

Compact width allows for space-saving installation in electronic devices.

Maximum Clock Frequency: 32 MHz

High clock frequency enables fast processing capabilities for the device.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards, ensuring reliability in automotive applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Inclusion of a microprocessor circuit allows for advanced processing functions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving overall efficiency.

Nominal Supply Voltage: 1.06 V

Stable supply voltage ensures consistent performance of the device.

Bus Compatibility: CAN; I2C; SPI; UART

Support for multiple bus protocols enables versatile communication options with external devices.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA780BDGABFRQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; SPI; UART

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

48

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA780BDGABFRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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