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M27W016100M1

STMicroelectronics

M27W016100M1 by STMicroelectronics

M27W016100M1 by STMicroelectronics is a 16Mb OTP ROM with a 3.6V max supply voltage and operates asynchronously. It features a compact SO package, ideal for space-constrained applications, and offers fast access times of up to 100 ns. This device is perfect for embedded systems requiring reliable memory solutions.

Median Price

$1.406

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,821 parts In-Stock

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3,821

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Anansix

USA . 2,034 parts In-Stock

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2,034

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Digiode

USA . 1,189 parts In-Stock

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1,189

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Bristol Electronics

USA . 217 parts In-Stock

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-

100+ parts

$1.406

1k+ parts

$0.844

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217

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$1.406

$0.844

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Microfarads

USA . 209 parts In-Stock

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209

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,965 parts In-Stock

1+ parts

$2.175

100+ parts

-

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$1.957

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1,965

$2.175

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$1.957

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MKK Technologies

India . 831 parts In-Stock

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$4.090

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831

$4.090

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DigiPath Technology Company

USA . 831 parts In-Stock

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$4.090

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831

$4.090

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A-Z Elektronik GmbH

Germany . 6,903 parts In-Stock

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6,903

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Alle Elektronik GmbH

Germany . 4,602 parts In-Stock

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4,602

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Corphita

USA . 1,490 parts In-Stock

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1,490

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Parana Technologies

USA . 975 parts In-Stock

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$2.600

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975

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$2.600

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Overview

Unlock the potential of your applications with the M27W016100M1 OTP ROM from STMicroelectronics! Renowned for their commitment to quality and innovation, STMicroelectronics delivers a reliable solution designed for seamless performance in various electronic devices. With its compact and efficient design, this memory chip enhances efficiency while ensuring robust data integrity, making it ideal for consumer electronics, automotive systems, and industrial applications. Experience unmatched value and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, providing reliable protection for the internal components.

Surface Mount: YES

Surface mount capability allows for efficient use of board space and enables easier assembly in automated processes, making it a convenient choice for modern electronics.

Package Shape: RECTANGULAR

Rectangular package shape optimizes space on printed circuit boards (PCBs) allowing for better layout and design flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances performance by allowing the device to operate independently of the system clock, simplifying integration into various applications.

Input/Output Type: COMMON

Common I/O type offers compatibility with a wide range of electronic systems, making this OTP ROM versatile for various applications.

Nominal Supply Voltage / Vsup: 3V

A nominal supply voltage of 3V aligns with standard low-power electronic components, contributing to energy efficiency.

Power Supplies (V): 3/3.3

Support for both 3V and 3.3V power supplies provides flexibility in circuit design, accommodating different requirements.

No. of Terminals: 44

With 44 terminals, this device supports a wide range of connections, enabling greater functionality and more complex circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and allows for a compact design in consumer electronics and embedded systems.

Maximum Operating Temperature: 70 °C

The maximum operating temperature of 70 °C ensures reliable performance in a variety of environments, making it suitable for commercial applications.

Organization: 1MX16

This organization provides a balance of density and accessibility, enabling efficient data management within the memory.

Output Characteristics: 3-STATE

3-state output characteristics allow the device to effectively manage data bus systems, preventing bus contention and improving overall performance.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C allows for reliable functionality in varied cooling environments, expanding its application range.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and reduces the risk of oxidation, ensuring a strong electrical connection.

Terminal Position: DUAL

Dual terminal positioning allows for flexible board layout designs, accommodating different types of PCB configurations.

Maximum Seated Height: 3 mm

A low seated height of 3 mm aids in low-profile applications where space is critical, making it a good choice for compact device designs.

Width: 12.6 mm

At a width of 12.6 mm, this ROM is designed to fit snugly in tight spaces without compromising performance.

Minimum Supply Voltage (Vsup): 2.7 V

Support for a minimum supply voltage of 2.7V ensures compatibility with a variety of power sources, further enhancing flexibility in applications.

Length: 28.5 mm

The length of 28.5 mm provides an optimal size for integration into standard electronic assemblies, ensuring convenience in design processes.

Temperature Grade: COMMERCIAL

Rated for commercial temperature conditions, this device is suitable for a wide range of everyday applications without compromising reliability.

Technology: CMOS

Using CMOS technology ensures low power consumption and high-speed operation, which are critical for modern electronic devices.

Parallel or Serial: PARALLEL

Parallel access allows for faster data retrieval and improved performance, making it ideal for applications requiring high-speed data processing.

Terminal Form: GULL WING

Gull wing terminal form enhances solderability and robustness, leading to improved connection reliability in circuit assemblies.

No. of Words: 1048576 words

With 1,048,576 words of storage, this OTP ROM offers substantial memory capacity suitable for various applications needing a significant amount of data storage.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing, enhancing overall system performance in data-intensive applications.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm is compatible with most PCB designs, simplifying integration into electronic devices.

No. of Words Code: 1M

With a coding of 1M words, this OTP ROM can efficiently store a variety of programming codes, suitable for embedded systems.

Maximum Supply Voltage (Vsup): 3.6 V

Support for a maximum supply voltage of 3.6V allows for flexibility in power supply configurations while ensuring safe operation.

Memory Density: 16777216 bit

With a density of 16,777,216 bits, this device provides ample memory for complex applications, accommodating large data requirements.

Memory IC Type: OTP ROM

As an OTP ROM, this memory type is ideal for applications requiring non-volatile storage that can be programmed once, ensuring data integrity.

Maximum Standby Current: 0.0001 Amp

A maximum standby current of 0.0001 Amp contributes to low power consumption during idle states, making it energy efficient.

Maximum Access Time: 100 ns

With a maximum access time of 100 ns, this ROM provides quick data retrieval, enhancing performance in high-speed applications.

Technical Specifications

OTP ROM M27W016100M1 attributes and parameters. Explore more OTP ROM devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

90NS ACCESS TIME AT VCC = 3.0 TO 3.6V.

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

28.5 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

44

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP44,.63

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

3 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

12.6 mm

Trade Compliance

M27W016100M1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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