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M27W016110N1

STMicroelectronics

M27W016110N1 by STMicroelectronics

M27W016110N1 by STMicroelectronics is a 16-bit OTP ROM with a 1M x 16 organization, ideal for applications requiring fast data access. It operates asynchronously at supply voltages b/w 2.7V and 3.6V, with a max access time of just 110 ns. Its compact SOIC package ensures efficient space utilization in electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,256 parts In-Stock

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4,256

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Vyrian

USA . 4,049 parts In-Stock

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4,049

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Anansix

USA . 1,241 parts In-Stock

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1,241

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,869 parts In-Stock

1+ parts

$3.150

100+ parts

-

1k+ parts

$2.835

10k+ parts

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1,869

$3.150

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$2.835

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MKK Technologies

India . 259 parts In-Stock

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$5.924

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259

$5.924

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DigiPath Technology Company

USA . 259 parts In-Stock

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$5.924

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259

$5.924

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Parana Technologies

USA . 1,118 parts In-Stock

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$3.766

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1,118

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$3.766

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Corphita

USA . 513 parts In-Stock

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513

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Overview

Unlock the potential of your designs with the M27W016110N1 from STMicroelectronics—a leader in innovation and quality. This high-performance OTP ROM offers reliable data storage in a compact, surface-mount package, ideal for applications ranging from consumer electronics to automotive systems. Experience enhanced efficiency and reduced power consumption without compromising on performance. Choose STMicroelectronics and elevate your projects with trusted technology that delivers lasting value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and insulation, making the device suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact circuit design and easier integration into modern electronics.

Package Shape: RECTANGULAR

The rectangular package shape is standard for efficient PCB layout and component placement.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in system timing, simplifying design for many applications.

Input/Output Type: COMMON

Common I/O type enhances compatibility with a wide range of devices.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V is ideal for low-power applications, contributing to energy efficiency.

Power Supplies (V): 3/3.3

Support for both 3V and 3.3V power supplies enhances versatility in design choices.

No. of Terminals: 48

A higher number of terminals provides more I/O options, accommodating complex functionalities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile maximize space efficiency on PCBs, crucial for compact devices.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability under moderate environmental conditions.

Organization: 1MX16

The 1MX16 organization presents an efficient memory structure for versatile data storage.

Output Characteristics: 3-STATE

3-state output simplifies bus sharing, allowing for more efficient communication in multi-device systems.

Minimum Operating Temperature: 0 °C

The ability to operate down to 0 °C ensures functionality in various ambient conditions.

Terminal Finish: TIN LEAD

Tin-lead finish increases solderability and reliability of connections.

Terminal Position: DUAL

Dual terminal position enhances flexibility in PCB layout and component placement.

Maximum Seated Height: 1.2 mm

A low profile of 1.2 mm allows for better fitting in compact designs.

Width: 12 mm

A width of 12 mm supports a range of applications while maintaining a compact size.

Minimum Supply Voltage (Vsup): 2.7 V

The capability to operate down to 2.7V supports a range of low-power applications.

Length: 18.4 mm

The length of 18.4 mm combined with its width ensures it fits standard module spaces.

Temperature Grade: COMMERCIAL

Designed for commercial use, ensuring a balance of performance and cost-effectiveness.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, which is essential for reliable performance.

Parallel or Serial: PARALLEL

Parallel interaction allows for faster data transfer rates, improving overall system performance.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and provide stable mechanical strength.

No. of Words: 1048576 words

Offering 1M words ensures substantial data storage capacity for various applications.

Memory Width: 16

A width of 16 bits allows for efficient data processing and transmission.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm enables dense packing of components, saving PCB space.

No. of Words Code: 1M

1M word capability provides ample storage for many applications, enhancing its utility.

Maximum Supply Voltage (Vsup): 3.6 V

The capacity to withstand supply voltages up to 3.6V ensures compatibility with various power sources.

Memory Density: 16777216 bit

High memory density indicates a significant amount of data storage in a compact form factor.

Memory IC Type: OTP ROM

As an OTP ROM, it offers secure data storage with the ability to be programmed once, making it suitable for permanent data applications.

Maximum Standby Current: 0.0001 Amp

Low standby current of 0.0001 Amp ensures minimal power consumption, making it ideal for battery-operated devices.

Maximum Access Time: 110 ns

A maximum access time of 110 ns is fast enough for most applications, ensuring responsive performance.

Technical Specifications

OTP ROM M27W016110N1 attributes and parameters. Explore more OTP ROM devices from STMicroelectronics

Specs

Maximum Access Time:

110 ns

Additional Features:

90NS ACCESS TIME AT VCC = 3.0 TO 3.6V.

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

12 mm

Trade Compliance

M27W016110N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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